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<p>Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels requires devices capable of generating large spin signals with efficient rectification capabilities, which are essential for active spintronic components. Here, we demonstrate a folded-bilayer graphene spin-valve device with giant non-local spin signals in the several mV range with pronounced spin-rectification effects. Efficient spin injection creates a significant spin accumulation of 20 meV and generates a spin diode effect with an asymmetry of over an order of magnitude between forward and reverse bias conditions. This spin-diode effect is expected to arise from nonlinear spin-charge interactions in the folded-bilayer graphene channel. These observed large spin signals and spin-diode effects in graphene systems offer a promising platform for developing active two-dimensional spintronic devices.</p>

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Large spin signal and spin rectification in folded-bilayer graphene

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月23日

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  • Md. Anamul Hoque,
  • Zoltán Kovács-Krausz,
  • Bing Zhao,
  • Prasanna Rout,
  • Ivan Vera Marun,
  • Szabolcs Csonka,
  • Péter Makk,
  • Saroj P. Dash

摘要

Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels requires devices capable of generating large spin signals with efficient rectification capabilities, which are essential for active spintronic components. Here, we demonstrate a folded-bilayer graphene spin-valve device with giant non-local spin signals in the several mV range with pronounced spin-rectification effects. Efficient spin injection creates a significant spin accumulation of 20 meV and generates a spin diode effect with an asymmetry of over an order of magnitude between forward and reverse bias conditions. This spin-diode effect is expected to arise from nonlinear spin-charge interactions in the folded-bilayer graphene channel. These observed large spin signals and spin-diode effects in graphene systems offer a promising platform for developing active two-dimensional spintronic devices.