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<p>The emergence of artificial intelligence and neuromorphic computing has revealed the importance of two-dimensional (2D) layered materials in the field of non-volatile memory technologies. Based on the available literature, this is the very first report demonstrating the integration of 2D Transition Metal Carbide MXenes, i.e. Titanium Carbide (Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub>) and Vanadium Carbide (V<sub>2</sub>CT<sub><i>x</i></sub>) with MoS<sub>2</sub> from the Transition Metal Dichalcogenide family for memristor devices. The nanoscale Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> and V<sub>2</sub>CT<sub>x</sub> MXene were employed as the bottom electrodes (as independent as well as bi-electrode combination) deposited uniformly on the substrate, along with the successful transfer of Chemical Vapor Deposition grown few-layers MoS<sub>2</sub> onto the nano-ranged sheets of MXene with Ag utilized as the top electrode. Raman analysis and Optical microscopy images indicated the fabrication of the novel best-yielding device Ti<sub>3</sub>C<sub>2</sub>/V<sub>2</sub>C/MoS<sub>2</sub>/Ag structure with high fidelity. Additionally, current-voltage (I-V) analysis showcased bipolar resistive switching phenomena comprising of an efficiently low SET voltage of 0.6 V, endurance of up-to 3000 cycles and retention of over 10<sup>3 </sup>seconds, extrapolated over million seconds. The stability of SET/RESET voltages, cycle-to-cycle and device-to-device reproducibility is demonstrated by 18 devices for a memristor array of (5 ×5), emphasizing the unexplored potential of MXene and MoS<sub>2</sub> based memristors for the scalable and large-area integration of devices in future memristors. Furthermore, Ti<sub>3</sub>C<sub>2</sub>/V<sub>2</sub>C/MoS<sub>2</sub>/Ag memristor also exhibited synaptic features of potentiation and depression showcasing potential to be employed in neuromorphic computing techniques.</p><p></p>

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MXene-MoS2 engineered heterostructured vertical memristors array: high-performance non-volatile memory with scalable integration

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月10日

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  • Kubra Sattar,
  • Ivan S. Babichuk,
  • Saleem Ayaz Khan,
  • Jian Yang,
  • Syed Rizwan

摘要

The emergence of artificial intelligence and neuromorphic computing has revealed the importance of two-dimensional (2D) layered materials in the field of non-volatile memory technologies. Based on the available literature, this is the very first report demonstrating the integration of 2D Transition Metal Carbide MXenes, i.e. Titanium Carbide (Ti3C2Tx) and Vanadium Carbide (V2CTx) with MoS2 from the Transition Metal Dichalcogenide family for memristor devices. The nanoscale Ti3C2Tx and V2CTx MXene were employed as the bottom electrodes (as independent as well as bi-electrode combination) deposited uniformly on the substrate, along with the successful transfer of Chemical Vapor Deposition grown few-layers MoS2 onto the nano-ranged sheets of MXene with Ag utilized as the top electrode. Raman analysis and Optical microscopy images indicated the fabrication of the novel best-yielding device Ti3C2/V2C/MoS2/Ag structure with high fidelity. Additionally, current-voltage (I-V) analysis showcased bipolar resistive switching phenomena comprising of an efficiently low SET voltage of 0.6 V, endurance of up-to 3000 cycles and retention of over 103 seconds, extrapolated over million seconds. The stability of SET/RESET voltages, cycle-to-cycle and device-to-device reproducibility is demonstrated by 18 devices for a memristor array of (5 ×5), emphasizing the unexplored potential of MXene and MoS2 based memristors for the scalable and large-area integration of devices in future memristors. Furthermore, Ti3C2/V2C/MoS2/Ag memristor also exhibited synaptic features of potentiation and depression showcasing potential to be employed in neuromorphic computing techniques.