<p>Shaping low-dimensional crystals into precise geometries with low disorder is an outstanding challenge. Here, we present a method to grow single crystals of arbitrary geometry within van der Waals (vdW) materials. By injecting molten material between atomically flat vdW layers within an SiO<sub>2</sub> mold, we produce ultraflat and thin crystals of bismuth, tin, and indium that are shaped as hallbars, rings, and nanowires. The crystals are grown fully encapsulated in hexagonal boron nitride, a vdW material, providing protection from oxidation. Varying the depth of the mold allows us to control the crystal thickness from ten to a hundred nanometers. Structural measurements demonstrate large single crystals encompassing the entire mold geometry, while transport measurements show reduced disorder scattering. This approach offers a means to produce complex single-crystal nanostructures without the disorder introduced by post-growth nanofabrication.</p>

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Van der Waals injection-molded crystals

  • Vinh Tran,
  • Amy X. Wu,
  • Laisi Chen,
  • Ziyu Feng,
  • Vijay Kumar,
  • Takashi Taniguchi,
  • Kenji Watanabe,
  • Javier Sanchez-Yamagishi

摘要

Shaping low-dimensional crystals into precise geometries with low disorder is an outstanding challenge. Here, we present a method to grow single crystals of arbitrary geometry within van der Waals (vdW) materials. By injecting molten material between atomically flat vdW layers within an SiO2 mold, we produce ultraflat and thin crystals of bismuth, tin, and indium that are shaped as hallbars, rings, and nanowires. The crystals are grown fully encapsulated in hexagonal boron nitride, a vdW material, providing protection from oxidation. Varying the depth of the mold allows us to control the crystal thickness from ten to a hundred nanometers. Structural measurements demonstrate large single crystals encompassing the entire mold geometry, while transport measurements show reduced disorder scattering. This approach offers a means to produce complex single-crystal nanostructures without the disorder introduced by post-growth nanofabrication.