Scholarlink

<p>We study the phonon dynamics of bulk and monolayer MoS<sub>2</sub> under strong, transient photodoping by time resolved spontaneous Raman scattering (TRRS). By measuring the frequency and effective temperature evolution of each Raman active mode, TRRS allows to map the doping-induced changes in the phonon spectrum and to assess the energy transfer between the electron and phonon degrees of freedom. Our results demonstrate the occurrence of a photodoping-induced phonon renormalization and represent a first direct observation of a clear difference in the electron-phonon coupling between the “hot”, strongly coupled A-symmetry mode and the “colder” E-symmetry one. We provide a model to map the energy redistribution in bulk and monolayer MoS<sub>2</sub>, describing their different relaxation dynamics. We demonstrate that detailed information on the electronic behaviour can be drawn by probing the phonon dynamics by TRRS. That allows envisioning the tuning of electronic and transport properties of semiconducting layered materials through phononic approaches.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Transient photodoping and phonon dynamics in bulk and monolayer MoS2 by time resolved Raman scattering

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年9月2日

查看全文
  • A. M. Finardi,
  • C. Fasolato,
  • A. Giugni,
  • M. Capeccia,
  • R. Cucini,
  • E. Cappelluti,
  • F. Sacchetti,
  • G. Panaccione,
  • P. Postorino,
  • C. Petrillo,
  • G. Rossi

摘要

We study the phonon dynamics of bulk and monolayer MoS2 under strong, transient photodoping by time resolved spontaneous Raman scattering (TRRS). By measuring the frequency and effective temperature evolution of each Raman active mode, TRRS allows to map the doping-induced changes in the phonon spectrum and to assess the energy transfer between the electron and phonon degrees of freedom. Our results demonstrate the occurrence of a photodoping-induced phonon renormalization and represent a first direct observation of a clear difference in the electron-phonon coupling between the “hot”, strongly coupled A-symmetry mode and the “colder” E-symmetry one. We provide a model to map the energy redistribution in bulk and monolayer MoS2, describing their different relaxation dynamics. We demonstrate that detailed information on the electronic behaviour can be drawn by probing the phonon dynamics by TRRS. That allows envisioning the tuning of electronic and transport properties of semiconducting layered materials through phononic approaches.