Scholarlink

<p>UV detectors have the advantages of simple signal processing, low false alarm rate, and strong anti-interference capability, and are widely used in both defense and civil applications. Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) holds great promise for photodetection, but its slow response rate hinders practical applications, so fast-response alternatives are urgently needed. Here we demonstrated ultrathin quasi-two-dimensional (2D) Ga<sub>2</sub>O<sub>3</sub> vertical UV photodetectors with short channel lengths constructed via liquid metal printing strategy for the first time. The device achieves ultrafast response time (≈1.18 μs), high detectivity (≈2.8 × 10<sup>13 </sup>Jones), large switching ratio (~10<sup>7</sup>), and low dark current (≈10 pA), which is comparable to commercial materials, demonstrating its considerable capability for photodetection technology field. This high-performance and low-cost photodetector based on liquid metal printing process provides a successful start for a wide range of applications of Ga<sub>2</sub>O<sub>3</sub> in UV detection. It demonstrates the great potential of novel quasi-2D Ga<sub>2</sub>O<sub>3</sub> devices for next-generation photodetection technologies.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Printing ultrathin Quasi-2D Ga2O3 for fast yet highly responsive vertical photodetectors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年7月1日

查看全文
  • Qian Li,
  • Ruofan Li,
  • Xueqing Chen,
  • Minghui Guo,
  • Jing Liu,
  • Xianwei Meng

摘要

UV detectors have the advantages of simple signal processing, low false alarm rate, and strong anti-interference capability, and are widely used in both defense and civil applications. Gallium oxide (Ga2O3) holds great promise for photodetection, but its slow response rate hinders practical applications, so fast-response alternatives are urgently needed. Here we demonstrated ultrathin quasi-two-dimensional (2D) Ga2O3 vertical UV photodetectors with short channel lengths constructed via liquid metal printing strategy for the first time. The device achieves ultrafast response time (≈1.18 μs), high detectivity (≈2.8 × 1013 Jones), large switching ratio (~107), and low dark current (≈10 pA), which is comparable to commercial materials, demonstrating its considerable capability for photodetection technology field. This high-performance and low-cost photodetector based on liquid metal printing process provides a successful start for a wide range of applications of Ga2O3 in UV detection. It demonstrates the great potential of novel quasi-2D Ga2O3 devices for next-generation photodetection technologies.