Scholarlink

<p>The advancement of transition metal dichalcogenide (TMD)-based electronics technology demands thorough understanding of dominant electrical instability mechanisms. Through rigorous analysis, we identify a previously unrecognized non-volatile strain in TMDs that emerges during electrical operation, distinct from known instability mechanisms. Strain induced by electrical operation in TMD devices distinctly impacts electron and hole transport, as evidenced by the performance evolution of our ambipolar MoSe<sub>2</sub> field effect transistors (FETs). Raman spectroscopy, photoluminescence, and work function measurements reveal tensile strain in the channel and compressive strain near the contacts. This strain mismatch between the channel and contact regions disrupts charge transport and leads to instability in electrical performance. These instabilities are inevitable as they originate from the interaction between the electric field and the piezoelectric properties of TMDs and are expected to intensify in the field-accelerated downscaled devices. If unaddressed, these instabilities could severely limit the practical and commercial viability of TMD-based electronics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年8月7日

查看全文
  • Utpreksh Patbhaje,
  • Rupali Verma,
  • Jeevesh Kumar,
  • A Ansh,
  • Mayank Shrivastava

摘要

The advancement of transition metal dichalcogenide (TMD)-based electronics technology demands thorough understanding of dominant electrical instability mechanisms. Through rigorous analysis, we identify a previously unrecognized non-volatile strain in TMDs that emerges during electrical operation, distinct from known instability mechanisms. Strain induced by electrical operation in TMD devices distinctly impacts electron and hole transport, as evidenced by the performance evolution of our ambipolar MoSe2 field effect transistors (FETs). Raman spectroscopy, photoluminescence, and work function measurements reveal tensile strain in the channel and compressive strain near the contacts. This strain mismatch between the channel and contact regions disrupts charge transport and leads to instability in electrical performance. These instabilities are inevitable as they originate from the interaction between the electric field and the piezoelectric properties of TMDs and are expected to intensify in the field-accelerated downscaled devices. If unaddressed, these instabilities could severely limit the practical and commercial viability of TMD-based electronics.