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<p>Compositionally graded AlGaN barrier GaN-HEMTs present a promising path to enhance device linearity, which is essential for low-noise radio-frequency (RF) amplifiers. In this work, a step-graded (SG) AlGaN/GaN HEMT is proposed and systematically investigated to explore the advantage of graded barrier compared to conventional HEMTs. The effect of Al-composition on DC/RF performance of the conventional HEMT (CHEMT), is initially analyzed, where 25% Al composition delivered optimal performance. Further, a step-graded (SG) barrier (Al composition varying from 25% to 15%) is introduced, forming an SGHEMT. The outcomes show that, graded barrier allows for a modified 2DEG confinement resulting in more distributed carrier profile, offering improved and broader transconductance (g<sub>m</sub>), and suppressed higher-order nonlinearities, thereby enhancing device linearity. Additionally, the impact of drain bias is also studied, where the SGHEMT achieves maximum performance at V<sub>DS</sub> = 5&#xa0;V, due to enhanced electric field and improved carrier transport. Moreover, thickness of SG-AlGaN barrier is scaled from 22&#xa0;nm to 11&#xa0;nm to achieve better electrical performance. The optimized SGHEMT with 11&#xa0;nm barrier is found to have g<sub>m</sub> of 420.4 mS/mm, maximum I<sub>D</sub> of 1.83&#xa0;A/mm, higher I<sub>d−sat</sub> of 2.82&#xa0;A/mm, &amp; enhanced f<sub>T</sub> of 154.3&#xa0;GHz due to better channel electrostatics, enhanced carrier confinement, improved drive current capability. paving the way for better linearity performances. These results emphasize exceptional DC/RF performance traits of proposed SGHEMT, rendering it a strong candidate for low-noise RF amplifiers that demand high linearity operation.</p>

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Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers

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  • 出版模式：

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  • 发表日期：

    2026年7月9日

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  • B. Mounika,
  • J. Ajayan,
  • Ribu Mathew,
  • Srinivasa Rao Karumuri,
  • Asisa Kumar Panigrahy

摘要

Compositionally graded AlGaN barrier GaN-HEMTs present a promising path to enhance device linearity, which is essential for low-noise radio-frequency (RF) amplifiers. In this work, a step-graded (SG) AlGaN/GaN HEMT is proposed and systematically investigated to explore the advantage of graded barrier compared to conventional HEMTs. The effect of Al-composition on DC/RF performance of the conventional HEMT (CHEMT), is initially analyzed, where 25% Al composition delivered optimal performance. Further, a step-graded (SG) barrier (Al composition varying from 25% to 15%) is introduced, forming an SGHEMT. The outcomes show that, graded barrier allows for a modified 2DEG confinement resulting in more distributed carrier profile, offering improved and broader transconductance (gm), and suppressed higher-order nonlinearities, thereby enhancing device linearity. Additionally, the impact of drain bias is also studied, where the SGHEMT achieves maximum performance at VDS = 5 V, due to enhanced electric field and improved carrier transport. Moreover, thickness of SG-AlGaN barrier is scaled from 22 nm to 11 nm to achieve better electrical performance. The optimized SGHEMT with 11 nm barrier is found to have gm of 420.4 mS/mm, maximum ID of 1.83 A/mm, higher Id−sat of 2.82 A/mm, & enhanced fT of 154.3 GHz due to better channel electrostatics, enhanced carrier confinement, improved drive current capability. paving the way for better linearity performances. These results emphasize exceptional DC/RF performance traits of proposed SGHEMT, rendering it a strong candidate for low-noise RF amplifiers that demand high linearity operation.