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<p>We present a comparative study of perpendicular magnetic tunnel junctions (p-MTJs) incorporating either a single CoFeB free layer or a double free layer structure consisting of two 1.2&#xa0;nm CoFeB layers separated by a 0.3&#xa0;nm Ta spacer. Remarkably, despite the increased total magnetic thickness, the double free layer preserves strong perpendicular magnetic anisotropy (PMA), underscoring the robustness of interfacial anisotropy in these systems. After annealing at 320&#xa0;°C, the CoFeB/Ta/CoFeB composite free layer shows and increase of TMR by ~ 50% relative to the single‑CoFeB free layer and maintains significantly higher TMR at elevated annealing temperatures, indicating a broadened annealing window. These results highlight the potential of multilayer CoFeB-based free layer designs for enabling thermally robust, high-performance spintronic devices.</p>

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Enhanced tunneling magnetoresistance and thermal stability in magnetic tunnel junctions with multiple CoFeB/Ta interfaces

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月14日

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  • S. Amara,
  • W. Al Saidi,
  • F. Al Ma’Mari,
  • G. Setti,
  • R. Sbiaa

摘要

We present a comparative study of perpendicular magnetic tunnel junctions (p-MTJs) incorporating either a single CoFeB free layer or a double free layer structure consisting of two 1.2 nm CoFeB layers separated by a 0.3 nm Ta spacer. Remarkably, despite the increased total magnetic thickness, the double free layer preserves strong perpendicular magnetic anisotropy (PMA), underscoring the robustness of interfacial anisotropy in these systems. After annealing at 320 °C, the CoFeB/Ta/CoFeB composite free layer shows and increase of TMR by ~ 50% relative to the single‑CoFeB free layer and maintains significantly higher TMR at elevated annealing temperatures, indicating a broadened annealing window. These results highlight the potential of multilayer CoFeB-based free layer designs for enabling thermally robust, high-performance spintronic devices.