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<p>Vanadium dioxide (VO<sub>2</sub>) thin films exhibit a reversible semiconductor–metal transition near room temperature, and their performance is strongly governed by microstructural and interfacial factors. In this study, VO<sub>2</sub> thin films were deposited on Z-cut quartz substrates by pulsed laser deposition under varying oxygen partial pressures and substrate temperatures. Plan-view transmission electron microscopy (TEM) techniques such as selected-area electron diffraction (SAD) and nanobeam diffraction (NBD) as well as confocal Raman spectroscopy were employed to examine the microstructure and crystallographic features of the films. The VO<sub>2</sub> films display a dense, polygonal morphology, composed of faceted grains with characteristic sizes of 50–200&#xa0;nm. These polygonal grains are formed during deposition in the high-temperature metallic R phase and transform upon cooling into semi-coherent VO<sub>2</sub> M1 nanograins with minimal lattice mismatch. The observed morphology is attributed to surface and interface energy anisotropy acting across the amorphous SiO<sub>2</sub> interlayer, which promotes random in-plain orientation. Confocal Raman mapping further supports phase uniformity and orientation variation across the grains. Overall, this work provides new insight into the mechanisms governing polygonal grain formation and coherence within VO<sub>2</sub> thin films on quartz, highlighting how interface-energy-driven growth can stabilize ordered microstructures even in the absence of epitaxial constraint.</p>

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Microstructural evolution and nanograin coherence in VO2 thin films grown by pulsed laser deposition

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月19日

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  • Ayushi Rai,
  • Vidar Hansen

摘要

Vanadium dioxide (VO2) thin films exhibit a reversible semiconductor–metal transition near room temperature, and their performance is strongly governed by microstructural and interfacial factors. In this study, VO2 thin films were deposited on Z-cut quartz substrates by pulsed laser deposition under varying oxygen partial pressures and substrate temperatures. Plan-view transmission electron microscopy (TEM) techniques such as selected-area electron diffraction (SAD) and nanobeam diffraction (NBD) as well as confocal Raman spectroscopy were employed to examine the microstructure and crystallographic features of the films. The VO2 films display a dense, polygonal morphology, composed of faceted grains with characteristic sizes of 50–200 nm. These polygonal grains are formed during deposition in the high-temperature metallic R phase and transform upon cooling into semi-coherent VO2 M1 nanograins with minimal lattice mismatch. The observed morphology is attributed to surface and interface energy anisotropy acting across the amorphous SiO2 interlayer, which promotes random in-plain orientation. Confocal Raman mapping further supports phase uniformity and orientation variation across the grains. Overall, this work provides new insight into the mechanisms governing polygonal grain formation and coherence within VO2 thin films on quartz, highlighting how interface-energy-driven growth can stabilize ordered microstructures even in the absence of epitaxial constraint.