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<p>In this study, we report the fabrication and characterization of broadband photodetectors based on carbon nanowalls (CNWs) synthesized by inductively coupled plasma-enhanced chemical vapor deposition (ICP-PECVD). Vertically oriented CNWs with a highly developed edge structure were transferred onto n-type silicon substrates to form CNWs/n-Si heterojunctions. The devices exhibited clear rectifying behavior and strong photoresponse under white light illumination. Spectral analysis revealed a wide detection range from 300 to 1150&#xa0;nm, with a maximum responsivity of 0.2&#xa0;A W<sup>− 1</sup> and a specific detectivity of 3 × 10<sup>11</sup> Jones. The CNWs/n-Si photodetectors demonstrated low noise equivalent power (NEP) values lie within the range of ~ 10<sup>− 12</sup>–10<sup>− 13</sup>&#xa0;W Hz<sup>− 1/2</sup>, a fast temporal response (<i>t</i><sub><i>rise</i></sub>/<i>t</i><sub><i>fall</i></sub> = 17/8 µs), and a cutoff frequency of 53&#xa0;kHz, confirming their suitability for broad ranges of optoelectronic applications.</p>

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Broadband, low-noise heterojunction photodiodes enabled by simple and scalable transfer of carbon nanowalls

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年4月24日

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  • Yerassyl Yerlanuly,
  • Hryhorii P. Parkhomenko,
  • Rakhymzhan Ye. Zhumadilov,
  • Renata R. Nemkayeva,
  • Baglan A. Kyrykbay,
  • Mykhailo M. Solovan,
  • Andrii I. Mostovyi,
  • Tlekkabul S. Ramazanov,
  • Maratbek T. Gabdullin,
  • Askhat N. Jumabekov,
  • Viktor V. Brus

摘要

In this study, we report the fabrication and characterization of broadband photodetectors based on carbon nanowalls (CNWs) synthesized by inductively coupled plasma-enhanced chemical vapor deposition (ICP-PECVD). Vertically oriented CNWs with a highly developed edge structure were transferred onto n-type silicon substrates to form CNWs/n-Si heterojunctions. The devices exhibited clear rectifying behavior and strong photoresponse under white light illumination. Spectral analysis revealed a wide detection range from 300 to 1150 nm, with a maximum responsivity of 0.2 A W− 1 and a specific detectivity of 3 × 1011 Jones. The CNWs/n-Si photodetectors demonstrated low noise equivalent power (NEP) values lie within the range of ~ 10− 12–10− 13 W Hz− 1/2, a fast temporal response (trise/tfall = 17/8 µs), and a cutoff frequency of 53 kHz, confirming their suitability for broad ranges of optoelectronic applications.