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<p>Strong spin–orbit coupling in 5<i>d</i> transition-metal oxides produces correlated electronic phases that are highly sensitive to disorder and dimensionality. Here, we investigate the thickness-dependent transport of epitaxial SrIrO<sub>3</sub> (SIO) thin films, comparing insulator-like (SIO_i) and metal-like (SIO_m) types. Without capping, SIO_i localizes at 7 unit cells (u.c.), while SIO_m localizes at 3 u.c., revealing distinct disorder thresholds. Notably, applying a SrTiO<sub>3</sub> (STO) capping layer suppresses localization in both types. The critical thickness for the metal–insulator transition decreases to below 3 u.c. for SIO_i and to 2 u.c. for SIO_m. Structural analysis suggests that the STO capping mitigates intrinsic disorder by inducing lattice relaxation in the ultrathin films. This approach offers a pathway to control electronic phases in correlated oxide heterostructures <i>via</i> interface engineering.</p>

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Disorder suppression and tunable localization in ultrathin SrIrO3 films via SrTiO3 capping

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月31日

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  • Jinyoung Maeng,
  • Seonha Hwang,
  • Jungchan Choi,
  • Dongwoo Lee,
  • Jonghyun Song

摘要

Strong spin–orbit coupling in 5d transition-metal oxides produces correlated electronic phases that are highly sensitive to disorder and dimensionality. Here, we investigate the thickness-dependent transport of epitaxial SrIrO3 (SIO) thin films, comparing insulator-like (SIO_i) and metal-like (SIO_m) types. Without capping, SIO_i localizes at 7 unit cells (u.c.), while SIO_m localizes at 3 u.c., revealing distinct disorder thresholds. Notably, applying a SrTiO3 (STO) capping layer suppresses localization in both types. The critical thickness for the metal–insulator transition decreases to below 3 u.c. for SIO_i and to 2 u.c. for SIO_m. Structural analysis suggests that the STO capping mitigates intrinsic disorder by inducing lattice relaxation in the ultrathin films. This approach offers a pathway to control electronic phases in correlated oxide heterostructures via interface engineering.