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<p>Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related challenges continue to limit their device performance and reliability. In this work, we demonstrate a strategy to enhance the memory window of IGZO/HfZrO<sub>2</sub> FeFETs through precise modulation of the oxygen partial pressure (PO<sub>2</sub>) during IGZO channel deposition. Systematic variation of PO<sub>2</sub> from 0% to 20% revealed a substantial impact on device characteristics, with the optimized 5% PO<sub>2</sub> condition yielding a maximum memory window of 1.85&#xa0;V. X-ray photoelectron spectroscopy confirmed that PO<sub>2</sub> tuning effectively governs the oxygen vacancy concentration in the IGZO channel and the defect density at the IGZO/HfZrO<sub>2</sub> interface. The optimized 5% PO<sub>2</sub> condition minimized interfacial defect states while maintaining sufficient carrier density, enabling both enhanced memory operation and accelerated switching dynamics. Nucleation-limited switching analysis further indicated that optimized oxygen control allows faster polarization switching compared to non-optimal conditions. These findings highlight the critical role of oxygen stoichiometry engineering in oxide semiconductor channels and provide a viable pathway toward improving the endurance, retention, and overall performance of ferroelectric memory devices.</p>

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​​​Oxy​gen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月18日

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  • He Young Kang,
  • Seung Hee Cha,
  • Yong Jun Jeong,
  • Gwang-Bok Kim,
  • Da Eun Kim,
  • Jae Kyeong Jeong

摘要

Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies. Nevertheless, interface-related challenges continue to limit their device performance and reliability. In this work, we demonstrate a strategy to enhance the memory window of IGZO/HfZrO2 FeFETs through precise modulation of the oxygen partial pressure (PO2) during IGZO channel deposition. Systematic variation of PO2 from 0% to 20% revealed a substantial impact on device characteristics, with the optimized 5% PO2 condition yielding a maximum memory window of 1.85 V. X-ray photoelectron spectroscopy confirmed that PO2 tuning effectively governs the oxygen vacancy concentration in the IGZO channel and the defect density at the IGZO/HfZrO2 interface. The optimized 5% PO2 condition minimized interfacial defect states while maintaining sufficient carrier density, enabling both enhanced memory operation and accelerated switching dynamics. Nucleation-limited switching analysis further indicated that optimized oxygen control allows faster polarization switching compared to non-optimal conditions. These findings highlight the critical role of oxygen stoichiometry engineering in oxide semiconductor channels and provide a viable pathway toward improving the endurance, retention, and overall performance of ferroelectric memory devices.