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<p>Betavoltaic (BV) cells based on wide-bandgap semiconductors are promising power sources for long-term operation in harsh environments, yet their energy-conversion efficiency remains below the theoretical limit because only a fraction of β-generated carriers are collected in the depletion region. Here, we propose a mesh-patterned 4H silicon carbide (4H-SiC) BV cell in which the top p-SiC layer is patterned into a two-dimensional mesh, and evaluate its performance using three-dimensional technology computer-aided design (3D TCAD) simulations and measurements of fabricated devices. Generation profiles for 5, 17, and 25&#xa0;keV electron-beam irradiation, representing the Ni-63 β spectrum, are obtained from CASINO simulations and implemented in Silvaco ATLAS. By sweeping the mesh opening width and the i- and p-layer thicknesses, we identify an optimized geometry yielding a maximum output power density <i>P</i><sub>out_max</sub> ≈ 2.60&#xa0;µW/cm<sup>2</sup> at 17&#xa0;keV. Relative to a conventional planar p–i–n cell, the mesh-type cell shows simulated <i>P</i><sub>out_max</sub> enhancements of 32.5%, 2.49%, and 0.35% at 5, 17, and 25&#xa0;keV, and measured enhancements of 65.1%, 4.57%, and 4.32%, respectively. These results demonstrate that a p-layer mesh pattern is an effective structural route to enhance the efficiency of Ni-63-based 4H-SiC betavoltaic cells.</p>

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Optimization and experimental demonstration of mesh-patterned 4H-SiC betavoltaic cells for enhanced power density

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月3日

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  • Kyeong Min Kim,
  • Kyung Hee Kim,
  • Sung Yun Woo,
  • Jeong Hyun Moon,
  • Young Jun Yoon,
  • Jae Hwa Seo

摘要

Betavoltaic (BV) cells based on wide-bandgap semiconductors are promising power sources for long-term operation in harsh environments, yet their energy-conversion efficiency remains below the theoretical limit because only a fraction of β-generated carriers are collected in the depletion region. Here, we propose a mesh-patterned 4H silicon carbide (4H-SiC) BV cell in which the top p-SiC layer is patterned into a two-dimensional mesh, and evaluate its performance using three-dimensional technology computer-aided design (3D TCAD) simulations and measurements of fabricated devices. Generation profiles for 5, 17, and 25 keV electron-beam irradiation, representing the Ni-63 β spectrum, are obtained from CASINO simulations and implemented in Silvaco ATLAS. By sweeping the mesh opening width and the i- and p-layer thicknesses, we identify an optimized geometry yielding a maximum output power density Pout_max ≈ 2.60 µW/cm2 at 17 keV. Relative to a conventional planar p–i–n cell, the mesh-type cell shows simulated Pout_max enhancements of 32.5%, 2.49%, and 0.35% at 5, 17, and 25 keV, and measured enhancements of 65.1%, 4.57%, and 4.32%, respectively. These results demonstrate that a p-layer mesh pattern is an effective structural route to enhance the efficiency of Ni-63-based 4H-SiC betavoltaic cells.