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<p>Achieving high responsivity is essential for advancing solar-blind photodetectors (SBPDs) in applications such as wireless communication and fire warning systems. In this study, we investigate metal-semiconductor-metal SBPDs based on β-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown on sapphire substrates by metal-organic chemical vapor deposition at different temperatures. Structural and spectroscopic analyses indicate that growth temperature modulates oxygen-related defect states in β-Ga<sub>2</sub>O<sub>3</sub> films, which correlate with changes in responsivity through defect-assisted photoexcitation processes. Notably, the SBPD fabricated from a Ga<sub>2</sub>O<sub>3</sub> film grown at 900&#xa0;°C exhibited a responsivity of 4.2⋅10<sup>4</sup> A/W, a detectivity of 1.2⋅10¹³ Jones, and an exceptional external quantum efficiency of 2.1⋅10⁷%. These findings highlight the important role of oxygen-related defect states in optimizing the photoresponse of β-Ga<sub>2</sub>O<sub>3</sub> based SBPDs.</p>

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Boosting the responsivity of β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors through oxygen-related defect states

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月22日

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  • Shiqi Yan,
  • Zijian Ding,
  • Teng Jiao,
  • Yaqi Zhou,
  • Yiming Wang,
  • Dingding Ni,
  • Zhanjun Shi,
  • Xin Dong,
  • Aimin Song,
  • Qian Xin

摘要

Achieving high responsivity is essential for advancing solar-blind photodetectors (SBPDs) in applications such as wireless communication and fire warning systems. In this study, we investigate metal-semiconductor-metal SBPDs based on β-Ga2O3 epitaxial films grown on sapphire substrates by metal-organic chemical vapor deposition at different temperatures. Structural and spectroscopic analyses indicate that growth temperature modulates oxygen-related defect states in β-Ga2O3 films, which correlate with changes in responsivity through defect-assisted photoexcitation processes. Notably, the SBPD fabricated from a Ga2O3 film grown at 900 °C exhibited a responsivity of 4.2⋅104 A/W, a detectivity of 1.2⋅10¹³ Jones, and an exceptional external quantum efficiency of 2.1⋅10⁷%. These findings highlight the important role of oxygen-related defect states in optimizing the photoresponse of β-Ga2O3 based SBPDs.