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<p>In this study, facile bismuth sulfide (Bi<sub>x</sub>S<sub>y</sub>) porous nanostructures (NSs) were synthesized by the liquid-based pulsed laser ablation (PLAL) method. The Bi<sub>x</sub>S<sub>y</sub> nanostructures were formed by laser ablation of the bismuth (Bi) target within 1&#xa0;M of thiourea [SC (NH<sub>2</sub>)<sub>2</sub>] aqueous solution, along a fixed 400 laser pulses. The influence of laser fluence on the microstructural, morphological, chemical, optical, and electrical features of Bi<sub>x</sub>S<sub>y</sub> porous film has been systematically examined. X-ray diffraction (XRD) analysis confirmed that all synthesized Bi<sub>x</sub>S<sub>y</sub> nanoparticles (NPs) demonstrated a poly-crystalline nature along orthorhombic crystal orientation. As the fluence of laser amplified from 6.37&#xa0;J/cm²/pulse to 15.92&#xa0;J/cm²/pulse, the attained direct bandgap of Bi<sub>x</sub>S<sub>y</sub> reduced from 1.8 to 1.69&#xa0;eV. Photoluminescence (PL) measurements showed a single emission peak at 672, 677, 712, and 729&#xa0;nm for Bi<sub>x</sub>S<sub>y</sub> NSs prepared at 6.37, 9.55, 12.74, and 15.92&#xa0;J/cm²/pulse, respectively. Raman spectroscopy revealed three vibrational modes positioned around 294, 510, and 654&#xa0;cm⁻¹. Field emission scanning electron microscope (FE-SEM) images displayed the construction of a porous, grid-like nanostructure, with particle sizes ranging from 34.08&#xa0;nm to 44.65&#xa0;nm for sample fabricated with 15.92&#xa0;J/cm²/pulse fluence. The dark I-V features of Al/n-Bi<sub>x</sub>S<sub>y</sub>/p-Si/Ag heterostructured photodetectors demonstrated rectifying behavior. Under incident light, the photo current-voltage (I-V) properties indicated high photosensitivity. A device attained at fluence of 12.74&#xa0;J/cm²/pulse exhibited the highest responsivity (1.139&#xa0;A/W) and specific detectivity (1.68 × 10<sup>¹³</sup> Jones) at 375&#xa0;nm. Additionally, the highest external quantum efficiency (EQE) of 376.52% was achieved at 375&#xa0;nm for the same photodetector. The time-resolved analysis (ON/OFF states) are also demonstrated by means of laser fluence.</p>

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Facile fabrication of porous BixSy/Si photodetectors by one step laser ablation in liquid

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月10日

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  • Ahmed M. Ahmed,
  • Asmiet Ramizy,
  • Raid A. Ismail,
  • Ethar Yahya Salih,
  • O. Aldaghri,
  • M. H. Eisa

摘要

In this study, facile bismuth sulfide (BixSy) porous nanostructures (NSs) were synthesized by the liquid-based pulsed laser ablation (PLAL) method. The BixSy nanostructures were formed by laser ablation of the bismuth (Bi) target within 1 M of thiourea [SC (NH2)2] aqueous solution, along a fixed 400 laser pulses. The influence of laser fluence on the microstructural, morphological, chemical, optical, and electrical features of BixSy porous film has been systematically examined. X-ray diffraction (XRD) analysis confirmed that all synthesized BixSy nanoparticles (NPs) demonstrated a poly-crystalline nature along orthorhombic crystal orientation. As the fluence of laser amplified from 6.37 J/cm²/pulse to 15.92 J/cm²/pulse, the attained direct bandgap of BixSy reduced from 1.8 to 1.69 eV. Photoluminescence (PL) measurements showed a single emission peak at 672, 677, 712, and 729 nm for BixSy NSs prepared at 6.37, 9.55, 12.74, and 15.92 J/cm²/pulse, respectively. Raman spectroscopy revealed three vibrational modes positioned around 294, 510, and 654 cm⁻¹. Field emission scanning electron microscope (FE-SEM) images displayed the construction of a porous, grid-like nanostructure, with particle sizes ranging from 34.08 nm to 44.65 nm for sample fabricated with 15.92 J/cm²/pulse fluence. The dark I-V features of Al/n-BixSy/p-Si/Ag heterostructured photodetectors demonstrated rectifying behavior. Under incident light, the photo current-voltage (I-V) properties indicated high photosensitivity. A device attained at fluence of 12.74 J/cm²/pulse exhibited the highest responsivity (1.139 A/W) and specific detectivity (1.68 × 10¹³ Jones) at 375 nm. Additionally, the highest external quantum efficiency (EQE) of 376.52% was achieved at 375 nm for the same photodetector. The time-resolved analysis (ON/OFF states) are also demonstrated by means of laser fluence.