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<p>This paper presents a novel design strategy to enhance the performance of a Doherty Power Amplifier using a nonlinear driver stage in the Peaking branch. To implement a class F harmonic termination for the peaking final stage, a third harmonic voltage component is injected at the input by a driver stage, allowing the phase of the third harmonic current at the output of the final stage to be reversed compared to its normal evolution. This enables a class F design strategy for a class C biased device. The paper details the theoretical foundation of the proposed approach together with a thoroughly experimental verification of its applicability at both device and circuit level. The prototype for X-Band applications is implemented on the 120&#xa0;nm gate-length GaN-on-SiC technology from WIN Semiconductors. The MMIC delivers over 36&#xa0;dBm of output power and 40% efficiency at 10&#xa0;GHz. Additionally, when tested with modulated signals having 10&#xa0;MHz channel bandwidth and 6&#xa0;dB Peak-to-Average Power Ratio, the linearity threshold of Adjacent Channel Power Ratio of −&#xa0;30&#xa0;dBc is achieved with an average output power exceeding 32&#xa0;dBm and efficiency greater than 32%.</p>

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A waveform engineering approach for class F operation in a class C biased peaking branch of GaN MMIC Doherty power amplifiers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月2日

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  • Francesco Manni,
  • Paolo Colantonio,
  • Vittorio Camarchia,
  • Anna Piacibello,
  • Gianni Bosi,
  • Valeria Vadalà,
  • Rocco Giofrè

摘要

This paper presents a novel design strategy to enhance the performance of a Doherty Power Amplifier using a nonlinear driver stage in the Peaking branch. To implement a class F harmonic termination for the peaking final stage, a third harmonic voltage component is injected at the input by a driver stage, allowing the phase of the third harmonic current at the output of the final stage to be reversed compared to its normal evolution. This enables a class F design strategy for a class C biased device. The paper details the theoretical foundation of the proposed approach together with a thoroughly experimental verification of its applicability at both device and circuit level. The prototype for X-Band applications is implemented on the 120 nm gate-length GaN-on-SiC technology from WIN Semiconductors. The MMIC delivers over 36 dBm of output power and 40% efficiency at 10 GHz. Additionally, when tested with modulated signals having 10 MHz channel bandwidth and 6 dB Peak-to-Average Power Ratio, the linearity threshold of Adjacent Channel Power Ratio of − 30 dBc is achieved with an average output power exceeding 32 dBm and efficiency greater than 32%.