<p>We explore the use of micro-transfer printing (µTP) technology to integrate thin lithium niobate (LN) films onto silicon nitride (SiN) waveguides, facilitating the development of compact electro-optical modulators. Three modulator architectures are investigated: Mach-Zehnder interferometer (MZI), Fabry-Perot (FP) resonator, and side-coupled FP resonators. By acting as a photonic molecule, the proposed coupled FP resonators enable improved spectral engineering with new functionalities while maximizing the transmission and quality-factor (Q-factor) of the resonances. Design, simulations, fabrication method, and experimental results are presented, demonstrating the potential of µTP in advancing electro-optical modulators. The half-wave voltage-length product (<i>V</i><sub><i>π</i></sub><i>L</i>) of the fabricated devices decreases as the Q-factor increases achieving <i>V</i><sub><i>π</i></sub><i>L =</i> 10.5, 4.3, and 2.74&#xa0;V.cm for MZI, FP, and photonic molecule modulators, respectively.</p>

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Compact modulators on silicon nitride waveguide platform via micro-transfer printing of thin-film lithium niobate

  • S. Hadi Badri,
  • Maria V. Kotlyar,
  • Risov Das,
  • Yeasir Arafat,
  • Owen Moynihan,
  • Brian Corbett,
  • Liam O’Faolain,
  • Samir Ghosh

摘要

We explore the use of micro-transfer printing (µTP) technology to integrate thin lithium niobate (LN) films onto silicon nitride (SiN) waveguides, facilitating the development of compact electro-optical modulators. Three modulator architectures are investigated: Mach-Zehnder interferometer (MZI), Fabry-Perot (FP) resonator, and side-coupled FP resonators. By acting as a photonic molecule, the proposed coupled FP resonators enable improved spectral engineering with new functionalities while maximizing the transmission and quality-factor (Q-factor) of the resonances. Design, simulations, fabrication method, and experimental results are presented, demonstrating the potential of µTP in advancing electro-optical modulators. The half-wave voltage-length product (VπL) of the fabricated devices decreases as the Q-factor increases achieving VπL = 10.5, 4.3, and 2.74 V.cm for MZI, FP, and photonic molecule modulators, respectively.