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<p>We report the manipulation of ferromagnetism in <i>n</i>-type magnetic semiconductor Ba(Zn,Co)<sub>2</sub>As<sub>2</sub> through carriers’ doping. Doping In or Cu into Zn-sites introduces additional <i>n</i>-type or <i>p</i>-type carriers, respectively. Focusing on Ba(Zn<sub>0.97</sub>Co<sub>0.03</sub>)<sub>2</sub>As<sub>2</sub> which has a <InlineEquation ID="IEq11"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41598_2025_94897_Article_IEq11.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="22" /> </InlineMediaObject> <EquationSource Format="TEX">\(T_C\)</EquationSource> </InlineEquation> <InlineEquation ID="IEq12"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41598_2025_94897_Article_IEq12.gif" Format="GIF" Height="6" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\sim\)</EquationSource> </InlineEquation> 31 K, In doping introduces additional <i>n</i>-type carriers and 2% In doping drastically improves the ferromagnetic transition temperature by 16% to 36 K. In contrast, 1.5% Cu doping suppresses <InlineEquation ID="IEq13"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41598_2025_94897_Article_IEq13.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="22" /> </InlineMediaObject> <EquationSource Format="TEX">\(T_C\)</EquationSource> </InlineEquation> by 52% to 15 K; 3% Cu doping turns the dominant carrier to <i>p</i>-type, and eventually transforms the ferromagnetic ordering into a paramagnetic state. Our experimental results unequivocally demonstrate that the magnetic ordering in Ba(Zn,Co)<sub>2</sub>As<sub>2</sub> is carriers’ mediated ferromagnetism, and its ground states can be manipulated by carriers.</p>

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Doping effects of indium and copper on ferromagnetism in N-type magnetic semiconductor Ba(Zn,Co)2As2

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月28日

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  • Xueqin Zhao,
  • Jinou Dong,
  • Lingfeng Xie,
  • Qiaolin Yang,
  • Xun Pan,
  • Haoyuan Tang,
  • Zhicheng Xu,
  • Guoxiang Zhi,
  • Yilun Gu,
  • Licheng Fu,
  • Fanlong Ning

摘要

We report the manipulation of ferromagnetism in n-type magnetic semiconductor Ba(Zn,Co)2As2 through carriers’ doping. Doping In or Cu into Zn-sites introduces additional n-type or p-type carriers, respectively. Focusing on Ba(Zn0.97Co0.03)2As2 which has a \(T_C\) \(\sim\) 31 K, In doping introduces additional n-type carriers and 2% In doping drastically improves the ferromagnetic transition temperature by 16% to 36 K. In contrast, 1.5% Cu doping suppresses \(T_C\) by 52% to 15 K; 3% Cu doping turns the dominant carrier to p-type, and eventually transforms the ferromagnetic ordering into a paramagnetic state. Our experimental results unequivocally demonstrate that the magnetic ordering in Ba(Zn,Co)2As2 is carriers’ mediated ferromagnetism, and its ground states can be manipulated by carriers.