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<p>C<sub>3</sub>HF<sub>5</sub> (CF<sub>3</sub>CHCF<sub>2</sub>, KSG14), a promising low global warming potential (GWP &lt; 1) alternative to traditional perfluorocarbon etching gases for advanced integrated circuit manufacturing, particularly for high-aspect-ratio SiO<sub>2</sub>/SiN stacked layers in 3D flash memory. This study investigates the dissociative photoionization dynamics of C<sub>3</sub>HF<sub>5</sub> across 10.0–26.0&#xa0;eV. Ion yield curves and breakdown diagrams reveal that C<sub>3</sub>HF<sub>5</sub> primarily fragments into C<sub>3</sub>HF<sub>5</sub><sup>+</sup>, C<sub>3</sub>F<sub>5</sub><sup>+</sup>, C<sub>3</sub>HF<sub>4</sub><sup>+</sup>, C<sub>3</sub>F<sub>4</sub><sup>+</sup>, C<sub>2</sub>F<sub>3</sub><sup>+</sup>, and CF<sub>3</sub><sup>+</sup> ions. Appearance Energies of these fragments, determined from the ion yield curves, indicate fragmentation pathways at low electronic transitions. These findings underscore C<sub>3</sub>HF<sub>5</sub>’s potential as an environmentally friendly etching gas with excellent performance characteristics.</p>

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Valence fragmentation dynamics of a promising low global warming etching gas CF3CHCF2

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月19日

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  • Tran Trung Nguyen,
  • Toshio Hayashi,
  • Hiroshi Iwayama,
  • Kenji Ishikawa

摘要

C3HF5 (CF3CHCF2, KSG14), a promising low global warming potential (GWP < 1) alternative to traditional perfluorocarbon etching gases for advanced integrated circuit manufacturing, particularly for high-aspect-ratio SiO2/SiN stacked layers in 3D flash memory. This study investigates the dissociative photoionization dynamics of C3HF5 across 10.0–26.0 eV. Ion yield curves and breakdown diagrams reveal that C3HF5 primarily fragments into C3HF5+, C3F5+, C3HF4+, C3F4+, C2F3+, and CF3+ ions. Appearance Energies of these fragments, determined from the ion yield curves, indicate fragmentation pathways at low electronic transitions. These findings underscore C3HF5’s potential as an environmentally friendly etching gas with excellent performance characteristics.