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<p>Pb-substituted La(O, F)BiS<sub>2</sub> (Pb-LaOFBiS<sub>2</sub>) exhibits improved superconducting properties and a resistivity anomaly around 100&#xa0;K that is attributed to a structural transition. We have performed temperature(<i>T</i>)-dependent photoelectron holography (PEH) to study dopant incorporation sites and the local structure change across the anomaly. The PEH study of Pb-LaOFBiS<sub>2</sub> provided evidence for the dominant incorporation sites of Pb and F: Pb atoms are incorporated into the Bi sites and F atoms are incorporated into the O site. No remarkable difference in the local structures around Pb and Bi atoms was observed. Across the temperature of the resistivity anomaly (<i>T</i><sup>*</sup>), photoelectron holograms of Bi 4f changed. Comparisons of holograms with those of non-substituted LaOFBiS<sub>2</sub> sample, as well as simulated holograms, suggested that (1), above <i>T</i><sup>*</sup>, the tetragonal structure of Pb-LaOFBiS<sub>2</sub> is different from the tetragonal structure of LaOFBiS<sub>2</sub> and (2), below <i>T</i><sup>*</sup>, the tetragonal structure still remains in Pb-LaOFBiS<sub>2</sub>. We discuss a possible origin of the difference in the structure above <i>T</i><sup>*</sup> and the implication of the result below <i>T</i><sup>*</sup>, which are necessary ingredients to understand the physical properties of Pb-LaOFBiS<sub>2</sub>.</p>

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Local-structure insight into the improved superconducting properties of Pb-substituted La(O, F)BiS2: a photoelectron holography study

  • 期刊论文

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  • 发表日期：

    2025年3月11日

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  • YaJun Li,
  • Yusuke Hashimoto,
  • Noriyuki Kataoka,
  • Zexu Sun,
  • Sota Kawamura,
  • Hiroto Tomita,
  • Taro Setoguchi,
  • Soichiro Takeuchi,
  • Shunjo Koga,
  • Kohei Yamagami,
  • Yoshinori Kotani,
  • Satoshi Demura,
  • Kanako Noguchi,
  • Hideaki Sakata,
  • Tomohiro Matsushita,
  • Takanori Wakita,
  • Yuji Muraoka,
  • Takayoshi Yokoya

摘要

Pb-substituted La(O, F)BiS2 (Pb-LaOFBiS2) exhibits improved superconducting properties and a resistivity anomaly around 100 K that is attributed to a structural transition. We have performed temperature(T)-dependent photoelectron holography (PEH) to study dopant incorporation sites and the local structure change across the anomaly. The PEH study of Pb-LaOFBiS2 provided evidence for the dominant incorporation sites of Pb and F: Pb atoms are incorporated into the Bi sites and F atoms are incorporated into the O site. No remarkable difference in the local structures around Pb and Bi atoms was observed. Across the temperature of the resistivity anomaly (T*), photoelectron holograms of Bi 4f changed. Comparisons of holograms with those of non-substituted LaOFBiS2 sample, as well as simulated holograms, suggested that (1), above T*, the tetragonal structure of Pb-LaOFBiS2 is different from the tetragonal structure of LaOFBiS2 and (2), below T*, the tetragonal structure still remains in Pb-LaOFBiS2. We discuss a possible origin of the difference in the structure above T* and the implication of the result below T*, which are necessary ingredients to understand the physical properties of Pb-LaOFBiS2.