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<p>This study investigates the chemical vapor deposition (CVD) of SiC coatings on high-purity graphite susceptors, which serve as critical components in the epitaxial growth systems of III-V semiconductor materials (specifically GaN/SiC heterostructures). Using CH₃SiCl₃-H₂ as precursor with Ar carrier gases, we systematically examined the coupled effects of: Temperature (1100–1350&#xa0;°C), Pressure (40–150 mbar), and ratios (6–12). Advanced characterization (XRD, SEM, XPS, nanoindentation) combined with computational fluid dynamics (CFD) simulations revealed: Kinetic regime transition at 1180&#xa0;°C, Pressure-dependent roughness evolution (Ra = 0.8&#xa0;μm at 50 mbar and 2.1&#xa0;μm at 200 mbar), Stoichiometric control (Si/C = 1 at H₂/MTS = 10). Maximum hardness (42.12GPa) for -oriented 3&#xa0;C-SiC. The optimized coatings demonstrated exceptional stability during MOCVD cycles (1100℃ GaN growth), maintaining: Surface roughness Ra = 1.55&#xa0;μm (initial:1.47&#xa0;μm), No interfacial degradation (SEM/TEM). These findings provide fundamental insights into CVD-SiC growth mechanisms while establishing practical guidelines for semiconductor-grade graphite susceptor production.</p>

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Study of the process-structure-property correlation in CVD-SiC coatings on graphite substrates

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月30日

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  • Yanli Huo,
  • Shouwan Qin,
  • Yufeng Chen,
  • Taisheng Yang,
  • Hailin Liu,
  • Jiajia Ma,
  • Bing Ai,
  • Zetan Liu,
  • Hailong Liang,
  • Huaping Song

摘要

This study investigates the chemical vapor deposition (CVD) of SiC coatings on high-purity graphite susceptors, which serve as critical components in the epitaxial growth systems of III-V semiconductor materials (specifically GaN/SiC heterostructures). Using CH₃SiCl₃-H₂ as precursor with Ar carrier gases, we systematically examined the coupled effects of: Temperature (1100–1350 °C), Pressure (40–150 mbar), and ratios (6–12). Advanced characterization (XRD, SEM, XPS, nanoindentation) combined with computational fluid dynamics (CFD) simulations revealed: Kinetic regime transition at 1180 °C, Pressure-dependent roughness evolution (Ra = 0.8 μm at 50 mbar and 2.1 μm at 200 mbar), Stoichiometric control (Si/C = 1 at H₂/MTS = 10). Maximum hardness (42.12GPa) for -oriented 3 C-SiC. The optimized coatings demonstrated exceptional stability during MOCVD cycles (1100℃ GaN growth), maintaining: Surface roughness Ra = 1.55 μm (initial:1.47 μm), No interfacial degradation (SEM/TEM). These findings provide fundamental insights into CVD-SiC growth mechanisms while establishing practical guidelines for semiconductor-grade graphite susceptor production.