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<p>We extend the application of electrical resistance tomography (ERT) to visualize <i>I</i><sub>G</sub>/<i>I</i><sub>D</sub> distribution in transparent single-walled carbon nanotube (SWCNT) thin films. By establishing the correlation between disorder and resistance through experimental measurements, we successfully converted ERT-reconstructed conductivity distributions into <i>I</i><sub>G</sub>/<i>I</i><sub>D</sub> maps. This approach enabled the detection of a defect region with an <i>I</i><sub>G</sub>/<i>I</i><sub>D</sub> ratio of approximately 15 embedded in a pristine SWCNT film (<i>I</i><sub>G</sub>/<i>I</i><sub>D</sub> = 18.1), corresponding to a minimum detectable resistance ratio (<i>R</i>/<i>R</i><sub>0</sub>) of 1.59. Moreover, in a sample containing two defect regions introduced by plasma irradiation at 20 and 40&#xa0;W, ERT successfully distinguished them despite the small difference in <i>I</i><sub>G</sub>/<i>I</i><sub>D</sub> ratio (1.1). Simulation studies revealed that positional deviations in reconstructed images can be attributed to electrode misalignment, contact resistance variation, and plasma-induced defect expansion. These results demonstrate the feasibility of ERT as a non-destructive, high-resolution technique for evaluating disorder variations in conductive thin films. Furthermore, due to its conductivity-based imaging principle, the method is applicable to other materials such as graphene, indium tin oxide (ITO), and metal nanowire networks, offering promise for real-time monitoring and quality assurance in large-area optoelectronic device manufacturing.</p>

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Mapping defect distribution in transparent single-walled carbon nanotube film with electrical resistance tomography

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月18日

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  • Keiya Minakawa,
  • Taiki Nakada,
  • Reiji Kaneko,
  • Takashi Ikuno

摘要

We extend the application of electrical resistance tomography (ERT) to visualize IG/ID distribution in transparent single-walled carbon nanotube (SWCNT) thin films. By establishing the correlation between disorder and resistance through experimental measurements, we successfully converted ERT-reconstructed conductivity distributions into IG/ID maps. This approach enabled the detection of a defect region with an IG/ID ratio of approximately 15 embedded in a pristine SWCNT film (IG/ID = 18.1), corresponding to a minimum detectable resistance ratio (R/R0) of 1.59. Moreover, in a sample containing two defect regions introduced by plasma irradiation at 20 and 40 W, ERT successfully distinguished them despite the small difference in IG/ID ratio (1.1). Simulation studies revealed that positional deviations in reconstructed images can be attributed to electrode misalignment, contact resistance variation, and plasma-induced defect expansion. These results demonstrate the feasibility of ERT as a non-destructive, high-resolution technique for evaluating disorder variations in conductive thin films. Furthermore, due to its conductivity-based imaging principle, the method is applicable to other materials such as graphene, indium tin oxide (ITO), and metal nanowire networks, offering promise for real-time monitoring and quality assurance in large-area optoelectronic device manufacturing.