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<p>Extreme ultraviolet (EUV), with a 13.5&#xa0;nm wavelength and 92&#xa0;eV, produces high-resolution patterns but becomes more sensitive to stochastic effects because of its lower photon density compared to ArF and KrF, which have energies less than 10&#xa0;eV. Therefore, controlling the stochastic effect is getting attention as EUV becomes mandatory to obtain ultrafine patterns. Unfortunately, various stochastic terms come from mask roughness, light-source, and photoresist materials, but each stochastic term is entangled and hard to decouple experimentally. Herein, we performed pattern shape simulation, separated each stochastic effect, and obtained patterns. Among the mask pattern roughness, photon-induced optical stochastics, and photoresist-induced material stochastics, material stochastics shows the most significant improvement on pattern break risk (2.5&#xa0;nm widened failure-free window). In addition, the dispersion of photons caused by optical stochastic effects or mask pattern roughness plays a role in offsetting the excessive degradation of patterns due to material stochastic effects. Our simulation-based approach clarifies the role of each stochastic effect in pattern formation and guides process conditions and the novel photoresist development.</p>

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Unraveling the relative impact of material and optical stochastic effects on EUV LWR

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年12月9日

查看全文
  • Ji Young Park,
  • Yongbeom Seo,
  • Dong-Hun Shin,
  • Hyunwoo Chae,
  • Yunsu Jang,
  • Won-Joon Son,
  • Seungmin Lee,
  • Heeyoung Go,
  • ChangMin Park,
  • Dae Sin Kim,
  • Myung Mo Sung,
  • Chawon Koh

摘要

Extreme ultraviolet (EUV), with a 13.5 nm wavelength and 92 eV, produces high-resolution patterns but becomes more sensitive to stochastic effects because of its lower photon density compared to ArF and KrF, which have energies less than 10 eV. Therefore, controlling the stochastic effect is getting attention as EUV becomes mandatory to obtain ultrafine patterns. Unfortunately, various stochastic terms come from mask roughness, light-source, and photoresist materials, but each stochastic term is entangled and hard to decouple experimentally. Herein, we performed pattern shape simulation, separated each stochastic effect, and obtained patterns. Among the mask pattern roughness, photon-induced optical stochastics, and photoresist-induced material stochastics, material stochastics shows the most significant improvement on pattern break risk (2.5 nm widened failure-free window). In addition, the dispersion of photons caused by optical stochastic effects or mask pattern roughness plays a role in offsetting the excessive degradation of patterns due to material stochastic effects. Our simulation-based approach clarifies the role of each stochastic effect in pattern formation and guides process conditions and the novel photoresist development.