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<p>This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray detection. Through a series of resistivity versus temperature measurements from room temperature to a few Kelvin, we explore the change in the conductive behavior of bismuth electrodeposited on various substrates. Our findings show for the first time both hysteretic and irreversible changes in resistivity as a function of temperature. Further, magnetoresistance measurements reveal notable variations in resistance behavior under different magnetic fields, highlighting the impact of magnetic fields on these films’ electronic transport properties, with an indication of potential weak anti-localization effects at the lowest temperatures. This study not only provides a deeper understanding of bismuth’s conductivity characteristics at low temperatures but also sheds light on the practical implications for developing more effective TESs for synchrotron X-ray facilities.</p>

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A temperature-induced hysteretic behavior of resistivity and magnetoresistance of electrodeposited bismuth microbridges for X-ray transition-edge sensor absorbers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月23日

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  • Orlando Quaranta,
  • Nunzia Coppola,
  • Lisa Gades,
  • Alice Galdi,
  • Tejas Guruswamy,
  • Ludovico Montella,
  • Alessandro Mauro,
  • Luigi Maritato,
  • Antonino Miceli,
  • Sergio Pagano,
  • Carlo Barone

摘要

This study investigates the temperature-induced hysteretic behavior of resistivity and magnetoresistance in electrodeposited bismuth films, with a focus on their application as absorbers in transition-edge sensors (TESs) for X-ray detection. Through a series of resistivity versus temperature measurements from room temperature to a few Kelvin, we explore the change in the conductive behavior of bismuth electrodeposited on various substrates. Our findings show for the first time both hysteretic and irreversible changes in resistivity as a function of temperature. Further, magnetoresistance measurements reveal notable variations in resistance behavior under different magnetic fields, highlighting the impact of magnetic fields on these films’ electronic transport properties, with an indication of potential weak anti-localization effects at the lowest temperatures. This study not only provides a deeper understanding of bismuth’s conductivity characteristics at low temperatures but also sheds light on the practical implications for developing more effective TESs for synchrotron X-ray facilities.