Scholarlink

<p>The optimization of zirconium oxide (ZrO<sub>2</sub>) crystallinity for gate insulators (GI) in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was studied to enhance the performance of dynamic random-access memory (DRAM) cell transistors. ZrO<sub>2</sub> films were deposited via atomic layer deposition (ALD) at temperatures ranging from 150&#xa0;°C to 300&#xa0;°C, yielding varied crystallinity from amorphous to high-crystallinity phases. Meso-crystalline ZrO<sub>2</sub> films deposited at 200&#xa0;°C achieved an optimal trade-off between ON and OFF current characteristics, attributed to reduced grain boundary leakage and an improved dielectric constant. Films deposited at higher temperatures (250&#xa0;°C and 300&#xa0;°C) exhibited increased OFF current and ON/OFF ratio degradation due to crystallization-induced defects, while lower temperatures (150&#xa0;°C) led to reliability issues from oxygen vacancies and carbon impurities. These results indicate the importance of precise temperature control during the ALD process to achieve meso-crystalline ZrO<sub>2</sub>, ensuring enhanced ON/OFF ratios, and device stability.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年11月25日

查看全文
  • Hanseok Jeong,
  • Soo Min Yoo,
  • Minki Choe,
  • In-Hwan Baek,
  • Woojin Jeon

摘要

The optimization of zirconium oxide (ZrO2) crystallinity for gate insulators (GI) in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was studied to enhance the performance of dynamic random-access memory (DRAM) cell transistors. ZrO2 films were deposited via atomic layer deposition (ALD) at temperatures ranging from 150 °C to 300 °C, yielding varied crystallinity from amorphous to high-crystallinity phases. Meso-crystalline ZrO2 films deposited at 200 °C achieved an optimal trade-off between ON and OFF current characteristics, attributed to reduced grain boundary leakage and an improved dielectric constant. Films deposited at higher temperatures (250 °C and 300 °C) exhibited increased OFF current and ON/OFF ratio degradation due to crystallization-induced defects, while lower temperatures (150 °C) led to reliability issues from oxygen vacancies and carbon impurities. These results indicate the importance of precise temperature control during the ALD process to achieve meso-crystalline ZrO2, ensuring enhanced ON/OFF ratios, and device stability.