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<p>This article explores the three-dimensional thermoelastic problem in a homogeneous, isotropic rectangular plate subjected to an external heat source and an electromagnetic field under three theories: nonlocal classical coupled dynamical theory (NLCDC), nonlocal Lord-Shulman theory (NLLS), and nonlocal dual phase-lag theory (NLDPL). Normal mode analysis is applied to the governing equations and employs the eigenvalue approach methodology to obtain an analytical closed-form solution. Comparative numerical differentiations are performed for three different semiconductors: Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs). The results are presented graphically in both two-dimensional and three-dimensional formats based on fixed physical parameters of the three semiconductors. The results reveal the significant effects of the comparisons across the three theories, the heat source, electromagnetic field, and thermoelastic coupling parameter, which are influenced by the non-local theory with ultra-short thermoelastic response. Different values of energy band gap <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41598_2025_23984_Article_IEq1.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="33" /> </InlineMediaObject> <EquationSource Format="TEX">\((E_g)\)</EquationSource> </InlineEquation> for the three semiconductors (Si, Ge, and GaAs) produce more pronounced characteristics for the variations in thermoelastic properties.</p>

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Comparative thermoelastic analysis of semiconductors with an external heat source under three theories

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月17日

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  • B. Das,
  • N. Islam,
  • A. Lahiri

摘要

This article explores the three-dimensional thermoelastic problem in a homogeneous, isotropic rectangular plate subjected to an external heat source and an electromagnetic field under three theories: nonlocal classical coupled dynamical theory (NLCDC), nonlocal Lord-Shulman theory (NLLS), and nonlocal dual phase-lag theory (NLDPL). Normal mode analysis is applied to the governing equations and employs the eigenvalue approach methodology to obtain an analytical closed-form solution. Comparative numerical differentiations are performed for three different semiconductors: Silicon (Si), Germanium (Ge), and Gallium Arsenide (GaAs). The results are presented graphically in both two-dimensional and three-dimensional formats based on fixed physical parameters of the three semiconductors. The results reveal the significant effects of the comparisons across the three theories, the heat source, electromagnetic field, and thermoelastic coupling parameter, which are influenced by the non-local theory with ultra-short thermoelastic response. Different values of energy band gap \((E_g)\) for the three semiconductors (Si, Ge, and GaAs) produce more pronounced characteristics for the variations in thermoelastic properties.