Crystal lattice site occupation-based optical properties in Co2+-doped ZGGO persistent luminescence nanoparticles
摘要
In this work, near-infrared (NIR) persistent luminescence nanoparticles Co2+ ions doped Zn2(1−x)Co2xGa3Ge0.75O8 (ZGGO:xCo2+) were successfully synthesized via hydrothermal synthesis. The average particle size decreased from 65.9 to 52.3 nm with increasing Co2+ concentration (x = 0.001–0.05). Co2+ ions can substitute for Zn2+ at tetrahedral and antisite octahedral sites in the ZGGO host lattice, with corresponding formation energies (ΔE) values are − 4.60 and − 3.03 eV, respectively. The crystal field intensities for Co2+ in the tetrahedral and octahedral sites were relatively weak, with values of 0.45 and 1.08, respectively. All samples exhibit strong emission peaked at 685 nm and weak emission peaked at 825 nm. The strong peak was deconvoluted into two distinct peaks at 672 nm and 697 nm, which were attributed to the4A2(4F) → 4T1(4F) transition of Co2+ ions occupying octahedral sites, and the4T1(4P) → 4A2(4F) transition of Co2+ ions occupying tetrahedral sites, respectively. The NIR persistent luminescence of samples was longer than 2 min and primarily originates from octahedral Co2+ sites. The relevant defects, specifically GaoZn and Zn’Ga-GaoZn, act as the charge traps. The corresponding ΔE values are − 0.55 eV and 1.84 eV, respectively. These results substantially advance the fundamental understanding of the doping and luminescence mechanisms of Co2+ in spinel gallate-based persistent luminescence materials.