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<p>This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (<i>I</i><sub><i>ON</i></sub>/<i>I</i><sub><i>OFF</i></sub>) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (<i>A</i><sub><i>V</i></sub>), transconductance generation factor (TGF), and cut-off frequency (<i>f</i><sub><i>T</i></sub>), are examined. The results demonstrate notable enhancements: transconductance (<i>g</i><sub><i>m</i></sub>) increases by 98.3%, TGF by 73.7%, and <i>A</i><sub><i>V</i></sub> by 72.66%. However, a 9.85% reduction in <i>f</i><sub><i>T</i></sub> is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.</p>

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Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月10日

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  • Md Akram Ahmad,
  • Muzaffar Imam,
  • Bhubon Chandra Mech,
  • V. Bharath Sreenivasulu

摘要

This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (ION/IOFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (AV), transconductance generation factor (TGF), and cut-off frequency (fT), are examined. The results demonstrate notable enhancements: transconductance (gm) increases by 98.3%, TGF by 73.7%, and AV by 72.66%. However, a 9.85% reduction in fT is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.