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<p>The Fowler–Nordheim (FN) tunneling scheme is constrained by its high operating voltage requirement and poor energy efficiency, posing significant technical challenges. In response, Hot Carrier Injection (HCI) - based programming methods have been explored as promising alternatives for achieving efficient programming at reduced voltages. This study investigates three fundamental issues inherent in the conventional Self–boosting channel–based HCI approach : program disturbance occurring in cells adjacent to the drain select line (DSL), non-uniform charge injection into the Charge Trap Layer (CTL), and programming efficiency (PGM efficiency) variations depending on cell location. To address these challenges, we propose a novel Bi-lateral HCI programming (HCI-BiPGM) scheme that induces hot carriers from both directions. By symmetrically shaping the lateral electric field around a centrally positioned floating channel region, the proposed scheme ensures uniform charge injection and consistent PGM efficiency irrespective of cell location. Technology Computer-Aided Design (TCAD) Simulation results confirm that the proposed HCI approach achieves approximately 60% higher PGM efficiency compared to FN tunneling methods. Furthermore, it exhibits improved voltage balancing characteristics, highlighting its potential as an advanced low-power NAND flash programming technology.</p>

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Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月14日

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  • Moonchurl Kim,
  • Jiwook Hong,
  • Choasub Kim,
  • Soo Jin Kim,
  • Sungyung Hwang,
  • Seung Jae Baik,
  • Jongwook Jeon

摘要

The Fowler–Nordheim (FN) tunneling scheme is constrained by its high operating voltage requirement and poor energy efficiency, posing significant technical challenges. In response, Hot Carrier Injection (HCI) - based programming methods have been explored as promising alternatives for achieving efficient programming at reduced voltages. This study investigates three fundamental issues inherent in the conventional Self–boosting channel–based HCI approach : program disturbance occurring in cells adjacent to the drain select line (DSL), non-uniform charge injection into the Charge Trap Layer (CTL), and programming efficiency (PGM efficiency) variations depending on cell location. To address these challenges, we propose a novel Bi-lateral HCI programming (HCI-BiPGM) scheme that induces hot carriers from both directions. By symmetrically shaping the lateral electric field around a centrally positioned floating channel region, the proposed scheme ensures uniform charge injection and consistent PGM efficiency irrespective of cell location. Technology Computer-Aided Design (TCAD) Simulation results confirm that the proposed HCI approach achieves approximately 60% higher PGM efficiency compared to FN tunneling methods. Furthermore, it exhibits improved voltage balancing characteristics, highlighting its potential as an advanced low-power NAND flash programming technology.