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<p>This work introduces a novel framework for analyzing wave propagation in hydro-semiconductors by simultaneously incorporating fractional-order heat conduction, temperature-dependent thermal conductivity, and rotational effects into a unified photo-thermoelastic model. Unlike previous studies that considered these effects separately, the present model couples nonlocal fractional heat transport with variable thermal conductivity in a rotating semiconductor medium. Analytical solutions are obtained using the normal mode method, and numerical results illustrate how fractional derivatives and temperature-dependent conductivity jointly reshape thermal, mechanical, and carrier wave behaviors compared to classical theories. The findings provide new physical insights into nonlocal, memory-driven, and anisotropic transport phenomena in advanced semiconductor systems, which are not captured by conventional thermoelasticity models.</p>

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Fractional heat conduction with variable thermal conductivity in rotating hydro-semiconductors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月7日

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  • Ibrahim S. Elshazly,
  • Farouq Alshormani,
  • M. Abou El Nasr,
  • Alaa A. El-Bary,
  • M. Adel,
  • Lotfi Jlali,
  • Khaled Lotfy

摘要

This work introduces a novel framework for analyzing wave propagation in hydro-semiconductors by simultaneously incorporating fractional-order heat conduction, temperature-dependent thermal conductivity, and rotational effects into a unified photo-thermoelastic model. Unlike previous studies that considered these effects separately, the present model couples nonlocal fractional heat transport with variable thermal conductivity in a rotating semiconductor medium. Analytical solutions are obtained using the normal mode method, and numerical results illustrate how fractional derivatives and temperature-dependent conductivity jointly reshape thermal, mechanical, and carrier wave behaviors compared to classical theories. The findings provide new physical insights into nonlocal, memory-driven, and anisotropic transport phenomena in advanced semiconductor systems, which are not captured by conventional thermoelasticity models.