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<p>Crystalline silicon (c-Si) solar cells have nearly reached their theoretical efficiency limits, constrained by the intrinsic properties of silicon. To overcome these limitations, tandem solar cell devices combining a narrow-bandgap c-Si bottom cell with a wide-bandgap top cell have emerged as a promising approach. Ge-based kesterite materials (Cu<sub>2</sub>ZnGe(SS)e<sub>4</sub>), offer significant potential for this application due to their tunable optoelectronic properties, earth-abundant composition, and compatibility with cost-effective fabrication techniques. However, improving the structural and electronic properties of Ge-kesterite absorbers remains critical for advancing their performance. Lithium (Li) doping, previously successful in Sn-based kesterite materials (Cu<sub>2</sub>ZnSnSSe<sub>4</sub>), provides an approach to enhance crystallinity, defect passivation, and grain growth in Ge-kesterite materials. This study investigates the effect of lithium doping on the structural, morphological, and optoelectronic properties of Cu<sub>2</sub>ZnGe(SS)e<sub>4</sub> (CZGSe) absorbers prepared using sputtered metallic precursors. Lithium was introduced via a Lithium fluoride (LiF) nano-layer, with an optimal thickness of 10&#xa0;nm significantly improving absorber quality. Doped CZGSe solar cells achieved an efficiency of 6.4% on Mo substrates, demonstrating enhanced crystallinity, grain growth, and Voc compared to undoped samples. Applying this doping strategy to transparent back electrodes showed notable material improvements, but slightly lower efficiency compared to Mo-based cells. These findings underscore the potential of lithium as a promising alkali dopant for Ge-kesterite materials, paving the way for their integration into tandem and next-generation photovoltaic devices.</p>

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Enhancing the performance of cu₂zngese₄ solar cells with metallic and transparent back electrodes via lithium doping

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月3日

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  • Abdeljalil Errafyg,
  • Naoufal Ennouhi,
  • Ikram Anefnaf,
  • Safae Aazou,
  • Victoria Rotaru,
  • Kunal Tiwari,
  • Alex Jimenez Arguijo,
  • Alejandro Pérez-Rodríguez,
  • Maxim Guc,
  • Edgardo Saucedo,
  • Zouheir Sekkat

摘要

Crystalline silicon (c-Si) solar cells have nearly reached their theoretical efficiency limits, constrained by the intrinsic properties of silicon. To overcome these limitations, tandem solar cell devices combining a narrow-bandgap c-Si bottom cell with a wide-bandgap top cell have emerged as a promising approach. Ge-based kesterite materials (Cu2ZnGe(SS)e4), offer significant potential for this application due to their tunable optoelectronic properties, earth-abundant composition, and compatibility with cost-effective fabrication techniques. However, improving the structural and electronic properties of Ge-kesterite absorbers remains critical for advancing their performance. Lithium (Li) doping, previously successful in Sn-based kesterite materials (Cu2ZnSnSSe4), provides an approach to enhance crystallinity, defect passivation, and grain growth in Ge-kesterite materials. This study investigates the effect of lithium doping on the structural, morphological, and optoelectronic properties of Cu2ZnGe(SS)e4 (CZGSe) absorbers prepared using sputtered metallic precursors. Lithium was introduced via a Lithium fluoride (LiF) nano-layer, with an optimal thickness of 10 nm significantly improving absorber quality. Doped CZGSe solar cells achieved an efficiency of 6.4% on Mo substrates, demonstrating enhanced crystallinity, grain growth, and Voc compared to undoped samples. Applying this doping strategy to transparent back electrodes showed notable material improvements, but slightly lower efficiency compared to Mo-based cells. These findings underscore the potential of lithium as a promising alkali dopant for Ge-kesterite materials, paving the way for their integration into tandem and next-generation photovoltaic devices.