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<p>This study explores the mechanisms of spin–orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based on the Landau-Lifshitz-Gilbert (LLG) equation, we examine several symmetry-breaking factors, including bias field misalignment, interlayer exchange coupling, out-of-plane spin polarization, and tilted magnetic anisotropy. The results reveal that bias field misalignment relative to the film plane significantly distorts the SOT switching hysteresis. Additionally, intrinsic symmetry-breaking effects, such as internal coupling fields, out-of-plane spin polarization, and tilted anisotropy, facilitate field-free SOT (FF-SOT) switching without external bias fields. Each type of FF-SOT switching exhibits distinct characteristics, including hysteresis shifts, switching ratios, and saturated magnetization. The combine effects, such as interlayer exchange bias and tilted anisotropy, significantly change the switching current density depending on their constructive or destructive combination in a device. Furthermore, a new approach to symmetry breaking via the Oersted field is proposed, which is applicable only along the ⟨100⟩ crystallographic directions of the FMS. This work emphasizes the role of symmetry-breaking in FF-SOT switching and offers fundamental information for interpreting FF-SOT switching observed from FMS films in experiments, contributing to the optimization of SOT efficiency and the advancement of spintronics technologies.</p>

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Symmetry-breaking effects on spin–orbit torque switching in ferromagnetic semiconductors with perpendicular magnetic anisotropy

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月7日

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  • Apu Kumar Jana,
  • Sanghoon Lee

摘要

This study explores the mechanisms of spin–orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based on the Landau-Lifshitz-Gilbert (LLG) equation, we examine several symmetry-breaking factors, including bias field misalignment, interlayer exchange coupling, out-of-plane spin polarization, and tilted magnetic anisotropy. The results reveal that bias field misalignment relative to the film plane significantly distorts the SOT switching hysteresis. Additionally, intrinsic symmetry-breaking effects, such as internal coupling fields, out-of-plane spin polarization, and tilted anisotropy, facilitate field-free SOT (FF-SOT) switching without external bias fields. Each type of FF-SOT switching exhibits distinct characteristics, including hysteresis shifts, switching ratios, and saturated magnetization. The combine effects, such as interlayer exchange bias and tilted anisotropy, significantly change the switching current density depending on their constructive or destructive combination in a device. Furthermore, a new approach to symmetry breaking via the Oersted field is proposed, which is applicable only along the ⟨100⟩ crystallographic directions of the FMS. This work emphasizes the role of symmetry-breaking in FF-SOT switching and offers fundamental information for interpreting FF-SOT switching observed from FMS films in experiments, contributing to the optimization of SOT efficiency and the advancement of spintronics technologies.