<p>Aiming at the response spectral of organic photodetectors (OPDs), we investigate a method of preparing the narrow-band near-infrared (NIR) OPDs by using thin film transfer print technology (TFTPT) to prepare the active layer of bulk heterojunction on the organic photo-filtering layer—a functional layer which can block some specific wavelengths of light and prevent these photons from reaching the next functional layer. Herein, short-wavelength photons are absorbed by the photo-filtering layer to form excitons, but they cannot be successfully dissociated due to the lack of a dissociation interface to the acceptor for eventual composite annihilation. While long-wavelength photons can effectively pass through the photo-filtering layer to reach the active layer and be absorbed and dissociated into free electrons and holes and eventually realize the narrow-band optical response. A narrow-band NIR OPD is prepared with a response peak of 790&#xa0;nm and a full width at half maximum of 62&#xa0;nm. Under the bias voltage of -5&#xa0;V, the responsivity and specific detectivity of the device at 790&#xa0;nm are 0.24&#xa0;A/W and 1.39 × 10<sup>12</sup> Jones, respectively. The responsivity and specific detectivity of OPDs prepared based on our method can be flexibly adjusted by the combination of different photo-filtering and active layers, and the universality of our method is also proved.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

The narrow-band organic photodetectors based on organic photo-filtering layers using a transfer printing technology

  • Pengchao Zhou,
  • Jialu Gu,
  • Lei Fan,
  • Jipeng Ma,
  • Kuang Sheng,
  • Hong Lian,
  • Kunping Guo,
  • Wei Shi,
  • Bin Wei

摘要

Aiming at the response spectral of organic photodetectors (OPDs), we investigate a method of preparing the narrow-band near-infrared (NIR) OPDs by using thin film transfer print technology (TFTPT) to prepare the active layer of bulk heterojunction on the organic photo-filtering layer—a functional layer which can block some specific wavelengths of light and prevent these photons from reaching the next functional layer. Herein, short-wavelength photons are absorbed by the photo-filtering layer to form excitons, but they cannot be successfully dissociated due to the lack of a dissociation interface to the acceptor for eventual composite annihilation. While long-wavelength photons can effectively pass through the photo-filtering layer to reach the active layer and be absorbed and dissociated into free electrons and holes and eventually realize the narrow-band optical response. A narrow-band NIR OPD is prepared with a response peak of 790 nm and a full width at half maximum of 62 nm. Under the bias voltage of -5 V, the responsivity and specific detectivity of the device at 790 nm are 0.24 A/W and 1.39 × 1012 Jones, respectively. The responsivity and specific detectivity of OPDs prepared based on our method can be flexibly adjusted by the combination of different photo-filtering and active layers, and the universality of our method is also proved.