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<p>Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have Ge<sub>48</sub>Te<sub>52</sub>, Ge<sub>46</sub>Te<sub>50</sub>Sc<sub>4</sub>, Ge<sub>44</sub>Te<sub>48</sub>Sc<sub>8</sub>, Ge<sub>43</sub>Te<sub>47</sub>Sc<sub>10</sub> and Ge<sub>41</sub>Te<sub>45</sub>Sc<sub>14</sub> chemical composition. The crystallization temperatures were found in the region of ~ 153–272&#xa0;°C and they increase with scandium content. Upon amorphous-crystalline material phase change, large changes in sheet resistance were measured, with electrical contrast in terms of sheet resistance ratio R<sub>annealed</sub>/R<sub>as−deposited</sub> in the range of 1.37.10<sup>-4</sup> – 9.1.10<sup>-7</sup>. Simultaneously, huge variations of optical functions were found as demonstrated by absolute values of optical contrast values (at 405&#xa0;nm) in the range of |Δn|+|Δk| = 1.88–3.75 reaching maximum for layer containing 8 at% of Sc.</p>

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Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月3日

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  • Marek Bouška,
  • Jan Gutwirth,
  • Kamil Bečvář,
  • Vladimír Kucek,
  • Stanislav Šlang,
  • Petr Janíček,
  • Lubomír Prokeš,
  • Josef Havel,
  • Virginie Nazabal,
  • Petr Němec

摘要

Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have Ge48Te52, Ge46Te50Sc4, Ge44Te48Sc8, Ge43Te47Sc10 and Ge41Te45Sc14 chemical composition. The crystallization temperatures were found in the region of ~ 153–272 °C and they increase with scandium content. Upon amorphous-crystalline material phase change, large changes in sheet resistance were measured, with electrical contrast in terms of sheet resistance ratio Rannealed/Ras−deposited in the range of 1.37.10-4 – 9.1.10-7. Simultaneously, huge variations of optical functions were found as demonstrated by absolute values of optical contrast values (at 405 nm) in the range of |Δn|+|Δk| = 1.88–3.75 reaching maximum for layer containing 8 at% of Sc.