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<p>This study presents a comprehensive evaluation of Copper Indium Gallium Selenide (CIGS) solar technology, benchmarked against crystalline silicon (c-Si) PERC PV technology. Utilizing a newly developed energy yield model, we analyzed the performance of CIGS in various environmental scenarios, emphasizing its behavior in low-light conditions and under different temperature regimes. The model demonstrated high accuracy with improved error metrics of normalized mean bias error (nMBE) ~&#xa0;1% and normalized root mean square error (nRMSE) of  ~&#xa0;8%–20% in simulating rack mounted setup and integrated PV systems. Key findings reveal that the CIGS technology, while slightly underperforming in integrated, low-irradiance setups, shows comparable or superior performance to c-Si PERC technology in high-irradiance and high-temperature conditions. A significant focus of the study was on the low-light performance of CIGS, where it exhibited notable voltage losses. Our research highlights the importance of reducing the diode ideality factor for enhancing CIGS power conversion efficiency, particularly In low-light conditions. These insights provide a pathway for future research and technological improvements, emphasizing defect engineering, passivation strategies to advance the understanding and application of the CIGS technology.</p>

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Energy yield framework to simulate thin film CIGS solar cells and analyze limitations of the technology

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年1月6日

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  • Santhosh Ramesh,
  • Arttu Tuomiranta,
  • Georgi H. Yordanov,
  • Hussein Badran,
  • Ali Hajjiah,
  • Bart Vermang,
  • Jef Poortmans

摘要

This study presents a comprehensive evaluation of Copper Indium Gallium Selenide (CIGS) solar technology, benchmarked against crystalline silicon (c-Si) PERC PV technology. Utilizing a newly developed energy yield model, we analyzed the performance of CIGS in various environmental scenarios, emphasizing its behavior in low-light conditions and under different temperature regimes. The model demonstrated high accuracy with improved error metrics of normalized mean bias error (nMBE) ~ 1% and normalized root mean square error (nRMSE) of  ~ 8%–20% in simulating rack mounted setup and integrated PV systems. Key findings reveal that the CIGS technology, while slightly underperforming in integrated, low-irradiance setups, shows comparable or superior performance to c-Si PERC technology in high-irradiance and high-temperature conditions. A significant focus of the study was on the low-light performance of CIGS, where it exhibited notable voltage losses. Our research highlights the importance of reducing the diode ideality factor for enhancing CIGS power conversion efficiency, particularly In low-light conditions. These insights provide a pathway for future research and technological improvements, emphasizing defect engineering, passivation strategies to advance the understanding and application of the CIGS technology.