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<p>Floquet engineering, in which an intense optical field modifies the electronic structure of a material, offers a route to the control of quantum and topological properties. However, it is challenging to realize this in experiments due to relatively weak light–matter coupling and the dominance of detrimental effects, such as multi-photon absorption and sample heating. Here we use time- and angle-resolved photoemission spectroscopy to show that in a monolayer semiconductor, Floquet effects caused by an excitonic field—the time-periodic oscillations of the self-energy of an electron bound to a hole—are two orders of magnitude stronger and persist longer than optically driven counterparts. Our measurements directly capture the hybridization between the exciton-dressed conduction band and the valence band in two-dimensional semiconductors, in agreement with first-principles calculations. The onset of this hybridization with increasing exciton density also correlates with the Bose–Einstein condensation to Bardeen–Cooper–Schrieffer crossover, extensively discussed in theory for non-equilibrium excitonic insulators. These results establish exciton-driven Floquet engineering as a means for studying correlated electronic phases.</p>

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Driving Floquet physics with excitonic fields

  • 期刊论文

  • 发表日期：

    2026年1月19日

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  • Vivek Pareek,
  • David R. Bacon,
  • Xing Zhu,
  • Yang-Hao Chan,
  • Fabio Bussolotti,
  • Marcos G. Menezes,
  • Nicholas S. Chan,
  • Joel Pérez Urquizo,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Enrico Perfetto,
  • Michael K. L. Man,
  • Julien Madéo,
  • Gianluca Stefanucci,
  • Diana Y. Qiu,
  • Kuan Eng Johnson Goh,
  • Felipe H. da Jornada,
  • Keshav M. Dani

摘要

Floquet engineering, in which an intense optical field modifies the electronic structure of a material, offers a route to the control of quantum and topological properties. However, it is challenging to realize this in experiments due to relatively weak light–matter coupling and the dominance of detrimental effects, such as multi-photon absorption and sample heating. Here we use time- and angle-resolved photoemission spectroscopy to show that in a monolayer semiconductor, Floquet effects caused by an excitonic field—the time-periodic oscillations of the self-energy of an electron bound to a hole—are two orders of magnitude stronger and persist longer than optically driven counterparts. Our measurements directly capture the hybridization between the exciton-dressed conduction band and the valence band in two-dimensional semiconductors, in agreement with first-principles calculations. The onset of this hybridization with increasing exciton density also correlates with the Bose–Einstein condensation to Bardeen–Cooper–Schrieffer crossover, extensively discussed in theory for non-equilibrium excitonic insulators. These results establish exciton-driven Floquet engineering as a means for studying correlated electronic phases.