Scholarlink

<p>Monolayer two-dimensional transition-metal dichalcogenides offer strong excitonic responses and gate-tunable optical properties, making them attractive for next-generation photonic and optoelectronic devices. However, achieving wafer-scale, room-temperature operation with a high photoluminescence modulation depth remains a key challenge owing to the limited electrostatic control and inefficient light–matter coupling. Here we overcome this challenge with a scalable, electrically tunable light-emitting platform that integrates monolayer MoS<sub>2</sub> with a work-function-controllable hafnium nitride (HfN) gate electrode. The favourable band alignment enables efficient charge accumulation and giant trion modulation, yielding a photoluminescence modulation depth of ~24%, five times stronger than that of p<sup>+</sup>-Si gates, across tunable regions exceeding 5,000 μm<sup>2</sup>. To amplify the emission, we introduce resonant nanoparticle-on-mirror plasmonic cavities and achieve a 46-fold emission enhancement due to the Purcell effect while preserving the gate-tunable trion control. Finite-difference time-domain simulations reveal strong optical field confinement in the nanoparticle-on-mirror cavity, which facilitates efficient plasmon–trion coupling. Our results demonstrate a room-temperature, CMOS-compatible approach for realizing actively reconfigurable two-dimensional light sources, and they pave the way for on-chip integrated photonics, visible light communication, dynamic display technologies, tunable emission platforms and advanced active control of light–matter interactions in two-dimensional systems.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Giant trion modulation in scalable monolayer MoS2 via plasmonic HfN gates

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月25日

查看全文
  • Tzu-Yu Peng,
  • Cheng-Han Lin,
  • Kai Qi,
  • Jui-Han Fu,
  • Chen-Yu Wang,
  • Jyun-Wei Huang,
  • Jia-Wern Chen,
  • Zheng-Zhe Chen,
  • Hung Wei Shiu,
  • Yao-Wen Chang,
  • Liang-Yan Hsu,
  • Min-Hsiung Shih,
  • Vincent Tung,
  • Yu-Jung Lu

摘要

Monolayer two-dimensional transition-metal dichalcogenides offer strong excitonic responses and gate-tunable optical properties, making them attractive for next-generation photonic and optoelectronic devices. However, achieving wafer-scale, room-temperature operation with a high photoluminescence modulation depth remains a key challenge owing to the limited electrostatic control and inefficient light–matter coupling. Here we overcome this challenge with a scalable, electrically tunable light-emitting platform that integrates monolayer MoS2 with a work-function-controllable hafnium nitride (HfN) gate electrode. The favourable band alignment enables efficient charge accumulation and giant trion modulation, yielding a photoluminescence modulation depth of ~24%, five times stronger than that of p+-Si gates, across tunable regions exceeding 5,000 μm2. To amplify the emission, we introduce resonant nanoparticle-on-mirror plasmonic cavities and achieve a 46-fold emission enhancement due to the Purcell effect while preserving the gate-tunable trion control. Finite-difference time-domain simulations reveal strong optical field confinement in the nanoparticle-on-mirror cavity, which facilitates efficient plasmon–trion coupling. Our results demonstrate a room-temperature, CMOS-compatible approach for realizing actively reconfigurable two-dimensional light sources, and they pave the way for on-chip integrated photonics, visible light communication, dynamic display technologies, tunable emission platforms and advanced active control of light–matter interactions in two-dimensional systems.