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<p>Optoelectronic computing devices capable of bipolar responses offer a route to simplified architectures for processing complex tasks. However, advancing such systems towards large-scale, in-sensor computing has been constrained by the difficulty of monolithically integrating neuromorphic optoelectronic arrays with peripheral circuits, largely due to high material growth temperatures and the non-uniform performance of complex device stacks. Here we report Mo<sub>4/3</sub>B<sub>2</sub>T<sub>z</sub> (T<sub>z </sub>= O, OH, F) boridene as a low-thermal-budget platform for neuromorphic optoelectronics, enabling twelve-inch deposition below 150 °C with excellent wafer-scale uniformity. Ordered metal vacancies and interlayer registry variations generate an unusual electrical anisotropy in which through-plane conduction dominates over in-plane transport. This anisotropy enables a simplified three-terminal device architecture that exhibits intrinsic bipolar and highly linear programmable photoresponses. Correlative conductive atomic force microscopy and first-principles simulations reveal that vacancy-mediated interlayer charge transfer governs the observed behaviour. We further fabricate a 54 × 54-pixel<sup>2</sup> optoelectronic computing array with a 99.48% yield and 16 fully separable states. Using a 3k-pixel system prototype, we demonstrate the diagnosis of ophthalmic disorders. Our work establishes Mo<sub>4/3</sub>B<sub>2</sub>T<sub>z</sub> boridene as a scalable nanomaterial platform that brings neuromorphic optoelectronic computing closer to practical implementations.</p>

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Twelve-inch electrically anisotropic boridene for optoelectronic computing

  • 期刊论文

  • 发表日期：

    2026年2月18日

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  • Yiqiang Zheng,
  • Hangyu Xu,
  • Hao Xu,
  • Zhexin Li,
  • Linlin Li,
  • Bowen Zhong,
  • Lingchen Liu,
  • Fei Deng,
  • Kangle Zhu,
  • Han Xue,
  • Hailong Wang,
  • Wenxuan Zhang,
  • Zhihao Xu,
  • Fang Wang,
  • Xiaokun Qin,
  • Wei Han,
  • Zheng Lou,
  • Sang-Hoon Bae,
  • Weida Hu,
  • Lili Wang

摘要

Optoelectronic computing devices capable of bipolar responses offer a route to simplified architectures for processing complex tasks. However, advancing such systems towards large-scale, in-sensor computing has been constrained by the difficulty of monolithically integrating neuromorphic optoelectronic arrays with peripheral circuits, largely due to high material growth temperatures and the non-uniform performance of complex device stacks. Here we report Mo4/3B2Tz (Tz = O, OH, F) boridene as a low-thermal-budget platform for neuromorphic optoelectronics, enabling twelve-inch deposition below 150 °C with excellent wafer-scale uniformity. Ordered metal vacancies and interlayer registry variations generate an unusual electrical anisotropy in which through-plane conduction dominates over in-plane transport. This anisotropy enables a simplified three-terminal device architecture that exhibits intrinsic bipolar and highly linear programmable photoresponses. Correlative conductive atomic force microscopy and first-principles simulations reveal that vacancy-mediated interlayer charge transfer governs the observed behaviour. We further fabricate a 54 × 54-pixel2 optoelectronic computing array with a 99.48% yield and 16 fully separable states. Using a 3k-pixel system prototype, we demonstrate the diagnosis of ophthalmic disorders. Our work establishes Mo4/3B2Tz boridene as a scalable nanomaterial platform that brings neuromorphic optoelectronic computing closer to practical implementations.