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<p>Doping-induced superconductivity in group-IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group-III atoms into C, Si or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular-beam epitaxy with extreme hole concentrations (<i>n</i><sub>h</sub> = 4.15 × 10<sup>21</sup> cm<sup>−3</sup>, 17.9% Ga substitution) that yield superconductivity with a critical temperature of <i>T</i><sub>c</sub> = 3.5 K. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor–semiconductor platform.</p>

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Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films

  • 期刊论文

  • 发表日期：

    2025年10月30日

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  • Julian A. Steele,
  • Patrick J. Strohbeen,
  • Carla Verdi,
  • Ardeshir Baktash,
  • Alisa Danilenko,
  • Yi-Hsun Chen,
  • Jechiel van Dijk,
  • Frederik H. Knudsen,
  • Axel Leblanc,
  • David Perconte,
  • Lianzhou Wang,
  • Eugene Demler,
  • Salva Salmani-Rezaie,
  • Peter Jacobson,
  • Javad Shabani

摘要

Doping-induced superconductivity in group-IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group-III atoms into C, Si or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular-beam epitaxy with extreme hole concentrations (nh = 4.15 × 1021 cm−3, 17.9% Ga substitution) that yield superconductivity with a critical temperature of Tc = 3.5 K. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor–semiconductor platform.