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<p>The anomalous Hall effect (AHE) in magnetic systems is typically governed by symmetry constraints that require the Hall response to be proportional to the out-of-plane magnetization component. Here we demonstrate the emergence of an unconventional in-plane AHE in a low-dimensional heterostructure. By interfacing a low-symmetry topological semimetal with a ferromagnetic insulator, we realize a system with reduced symmetry in which only a single mirror plane is preserved. When the magnetization acquires a finite component within this mirror plane, the remaining symmetry is broken, enabling a Hall response that depends on both in-plane and out-of-plane magnetization components. Measurements across multiple devices reveal a gate-tunable AHE, indicating electrostatic control of the underlying mechanisms. A minimal symmetry-constrained microscopic model shows that interfacial spin–orbit coupling and exchange interaction are responsible for the observed multidirectional AHE response. Our work establishes a pathway for engineering tunable, symmetry-driven Hall effects in low-dimensional quantum materials.</p>

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In-plane anomalous Hall effect in a low-dimensional system

  • 期刊论文

  • 发表日期：

    2026年5月28日

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  • I-Hsuan Kao,
  • Ravi Kumar Bandapelli,
  • Zhenhong Cui,
  • Shuchen Zhang,
  • Jian Tang,
  • Tiema Qian,
  • Souvik Sasmal,
  • Aalok Tiwari,
  • Mei-Tung Chen,
  • Raghvendra Posti,
  • Rahul Rao,
  • Jiahan Li,
  • James H. Edgar,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Ni Ni,
  • Su-Yang Xu,
  • Qiong Ma,
  • Shubhayu Chatterjee,
  • Jyoti Katoch,
  • Simranjeet Singh

摘要

The anomalous Hall effect (AHE) in magnetic systems is typically governed by symmetry constraints that require the Hall response to be proportional to the out-of-plane magnetization component. Here we demonstrate the emergence of an unconventional in-plane AHE in a low-dimensional heterostructure. By interfacing a low-symmetry topological semimetal with a ferromagnetic insulator, we realize a system with reduced symmetry in which only a single mirror plane is preserved. When the magnetization acquires a finite component within this mirror plane, the remaining symmetry is broken, enabling a Hall response that depends on both in-plane and out-of-plane magnetization components. Measurements across multiple devices reveal a gate-tunable AHE, indicating electrostatic control of the underlying mechanisms. A minimal symmetry-constrained microscopic model shows that interfacial spin–orbit coupling and exchange interaction are responsible for the observed multidirectional AHE response. Our work establishes a pathway for engineering tunable, symmetry-driven Hall effects in low-dimensional quantum materials.