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<p>The rapid growth of artificial intelligence models has outpaced the capabilities of current dynamic random-access memory/flash storage systems in speed, density and energy efficiency. Three-dimensional phase-change memory offers a scalable solution, yet cross-point integration is limited by selector performance. Here, by reverse-tracing previously reported ovonic threshold switch (OTS) materials, we identify amorphous elemental selenium as a highly effective OTS selector. It exhibits an ultralow leakage current (4 × 10<sup>−</sup><sup>12</sup> A), an on/off current ratio exceeding 10<sup>8</sup>, high drive current density (21.2 MA cm<sup>−2</sup>), fast switching speed (~20 ns) and endurance up to 2 × 10<sup>9</sup> cycles. Photoexcitation spectroscopy and density functional theory calculations reveal a charge-triggered mechanism: dense trap pairs in amorphous selenium strongly pin the Fermi level and suppress leakage, while full carrier excitation in these traps near threshold, together with impact-ionization-induced avalanche multiplication, enables abrupt switching and high on-current. Integrated selenium-selector/phase-change memory arrays demonstrate reliable write/erase operations with a 0.75-V read margin. These results clarify the OTS mechanism and establish amorphous selenium as a leading selector material for three-dimensional memory.</p>

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Charge-triggered switching mechanism in selenium selector enabling ultralow leakage current

  • 期刊论文

  • 发表日期：

    2026年3月2日

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  • Yuting Sun,
  • Tamihiro Gotoh,
  • Jiayi Zhao,
  • Mengfei Zhang,
  • Shucheng Shi,
  • Hui Zhang,
  • Zhi Liu,
  • Jiabin Shen,
  • Richard Dronskowski,
  • Zhitang Song,
  • Stephen R. Elliott,
  • Min Zhu

摘要

The rapid growth of artificial intelligence models has outpaced the capabilities of current dynamic random-access memory/flash storage systems in speed, density and energy efficiency. Three-dimensional phase-change memory offers a scalable solution, yet cross-point integration is limited by selector performance. Here, by reverse-tracing previously reported ovonic threshold switch (OTS) materials, we identify amorphous elemental selenium as a highly effective OTS selector. It exhibits an ultralow leakage current (4 × 10−12 A), an on/off current ratio exceeding 108, high drive current density (21.2 MA cm−2), fast switching speed (~20 ns) and endurance up to 2 × 109 cycles. Photoexcitation spectroscopy and density functional theory calculations reveal a charge-triggered mechanism: dense trap pairs in amorphous selenium strongly pin the Fermi level and suppress leakage, while full carrier excitation in these traps near threshold, together with impact-ionization-induced avalanche multiplication, enables abrupt switching and high on-current. Integrated selenium-selector/phase-change memory arrays demonstrate reliable write/erase operations with a 0.75-V read margin. These results clarify the OTS mechanism and establish amorphous selenium as a leading selector material for three-dimensional memory.