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<p>Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe<sub>2</sub>) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>), which allows to electrically read the up and down magnetic states of the Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> layer through longitudinal resistance measurements.</p>

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Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

  • 期刊论文

  • 发表日期：

    2025年3月21日

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  • I-Hsuan Kao,
  • Junyu Tang,
  • Gabriel Calderon Ortiz,
  • Menglin Zhu,
  • Sean Yuan,
  • Rahul Rao,
  • Jiahan Li,
  • James H. Edgar,
  • Jiaqiang Yan,
  • David G. Mandrus,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Jinwoo Hwang,
  • Ran Cheng,
  • Jyoti Katoch,
  • Simranjeet Singh

摘要

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe2) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr2Ge2Te6), which allows to electrically read the up and down magnetic states of the Cr2Ge2Te6 layer through longitudinal resistance measurements.