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<p>The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the <i>c</i> axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal–organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.</p>

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Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate

  • 期刊论文

  • 发表日期：

    2025年3月19日

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  • Seokho Moon,
  • Odongo Francis Ngome Okello,
  • Adrien Rousseau,
  • Chang-Won Choi,
  • Youngjae Kim,
  • Yunjae Park,
  • Jiye Kim,
  • Jaewon Kim,
  • Minhyuk Kim,
  • Pierre Valvin,
  • Jaehee Cho,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Hu Young Jeong,
  • Giorgia Fugallo,
  • Wilfried Desrat,
  • Feng Ding,
  • JaeDong Lee,
  • Bernard Gil,
  • Guillaume Cassabois,
  • Si-Young Choi,
  • Jong Kyu Kim

摘要

The stacking sequence of two-dimensional hexagonal boron nitride (hBN) is a critical factor that determines its polytypes and its distinct physical properties. Although most hBN layers adopt the thermodynamically stable AA′ stacking sequence, achieving alternative stacking configurations has remained a long-standing challenge. Here we demonstrate the scalable synthesis of hBN featuring unprecedented AA stacking, where atomic monolayers align along the c axis without any translation or rotation. This previously considered thermodynamically unfavourable hBN polytype is achieved through epitaxial growth on a two-inch single-crystalline gallium nitride wafer, using a metal–organic chemical vapour deposition technique. Comprehensive structural and optical characterizations, complemented by theoretical modelling, evidence the formation of AA-stacked multilayer hBN and reveal that hBN nucleation on the vicinal gallium nitride surface drives the unidirectional alignment of layers. Here electron doping plays a central role in stabilizing the AA stacking configuration. Our findings provide further insights into the scalable synthesis of engineered hBN polytypes, characterized by unique properties such as large optical nonlinearity.