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<p>Currently, p-type two-dimensional (2D) materials lag behind n-type ones in both quantity and performance, hindering their use in advanced p-channel transistors and complementary logic circuits. Non-layered materials, which make up 95% of crystal structures, hold the potential for superior p-type 2D materials but remain challenging to synthesize. Here we show a vapour–liquid–solid–solid growth of atomically thin (&lt;1 nm), high-quality, non-layered 2D β-Bi<sub>2</sub>O<sub>3</sub> crystals on a SiO<sub>2</sub>/Si substrate. These crystals form via a transformation from layered BiOCl intermediates. We further realize 2D β-Bi<sub>2</sub>O<sub>3</sub> transistors with room-temperature hole mobility and an on/off current ratio of 136.6 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and 1.2 × 10<sup>8</sup>, respectively. The p-type nature is due to the strong suborbital hybridization of Bi 6<i>s</i><sup>2</sup>6<i>p</i><sup>3</sup> with O 2<i>p</i><sup>4</sup> at the crystal’s M-point valence band maximum. Our work can be used as a reference that adds more 2D non-layered materials to the 2D toolkit and shows 2D β-Bi<sub>2</sub>O<sub>3</sub> to be promising candidate for future electronics.</p>

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Vapour–liquid–solid–solid growth of two-dimensional non-layered β-Bi2O3 crystals with high hole mobility

  • 期刊论文

  • 发表日期：

    2025年3月7日

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  • Yunhai Xiong,
  • Duo Xu,
  • Yousheng Zou,
  • Lili Xu,
  • Yujie Yan,
  • Jianghua Wu,
  • Chen Qian,
  • Xiufeng Song,
  • Kairui Qu,
  • Tong Zhao,
  • Jie Gao,
  • Jialin Yang,
  • Kai Zhang,
  • Shengli Zhang,
  • Peng Wang,
  • Xiang Chen,
  • Haibo Zeng

摘要

Currently, p-type two-dimensional (2D) materials lag behind n-type ones in both quantity and performance, hindering their use in advanced p-channel transistors and complementary logic circuits. Non-layered materials, which make up 95% of crystal structures, hold the potential for superior p-type 2D materials but remain challenging to synthesize. Here we show a vapour–liquid–solid–solid growth of atomically thin (<1 nm), high-quality, non-layered 2D β-Bi2O3 crystals on a SiO2/Si substrate. These crystals form via a transformation from layered BiOCl intermediates. We further realize 2D β-Bi2O3 transistors with room-temperature hole mobility and an on/off current ratio of 136.6 cm2 V−1 s−1 and 1.2 × 108, respectively. The p-type nature is due to the strong suborbital hybridization of Bi 6s26p3 with O 2p4 at the crystal’s M-point valence band maximum. Our work can be used as a reference that adds more 2D non-layered materials to the 2D toolkit and shows 2D β-Bi2O3 to be promising candidate for future electronics.