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<p>Arrays of hybrid metal-semiconductor quantum dots offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid dots has a quasi-continuous level spectrum, each site in an array can be effectively electronically identical; in contrast, each conventional semiconductor quantum dot has its own spectral fingerprint. Meanwhile, the semiconductor component retains gate-tunability of intersite coupling. This combination creates a scalable platform for simulating correlated ground states driven by Coulomb interactions. We report the fabrication and characterization of hybrid metal-semiconductor dots, featuring a submicron metal island transparently contacting a gate-confined region of an InAs quantum well with tunable couplings to macroscopic leads. Tuning the dot-lead coupling to the weak-coupling limit yields highly-uniform Coulomb peaks, with no resolvable excitation spectrum in the Coulomb diamonds. We propose a realistic device design for a hybrid dot-based linear array quantum simulator and outline the correlated many-body physics accessible in this architecture.</p>

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Hybrid metal-semiconductor quantum dots in InAs as a platform for quantum simulation

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月27日

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  • Praveen Sriram,
  • Connie L. Hsueh,
  • Karna A. Morey,
  • Tiantian Wang,
  • Candice Thomas,
  • Geoffrey C. Gardner,
  • Marc A. Kastner,
  • Michael J. Manfra,
  • Andrew K. Mitchell,
  • Eran Sela,
  • David Goldhaber-Gordon

摘要

Arrays of hybrid metal-semiconductor quantum dots offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid dots has a quasi-continuous level spectrum, each site in an array can be effectively electronically identical; in contrast, each conventional semiconductor quantum dot has its own spectral fingerprint. Meanwhile, the semiconductor component retains gate-tunability of intersite coupling. This combination creates a scalable platform for simulating correlated ground states driven by Coulomb interactions. We report the fabrication and characterization of hybrid metal-semiconductor dots, featuring a submicron metal island transparently contacting a gate-confined region of an InAs quantum well with tunable couplings to macroscopic leads. Tuning the dot-lead coupling to the weak-coupling limit yields highly-uniform Coulomb peaks, with no resolvable excitation spectrum in the Coulomb diamonds. We propose a realistic device design for a hybrid dot-based linear array quantum simulator and outline the correlated many-body physics accessible in this architecture.