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<p>Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexible electronics. The Young’s modulus, a measure of how easily a material deforms, plays a critical role in the coupled deformation of a crystal on a flexible substrate, as well as the transfer of strain from the substrate onto the layer. Here, we report on the bending behaviour of gallium selenide (GaSe), a van der Waals semiconductor with a small Young’s modulus and strain-dependent electronic band structure. A controllable, reproducible uniaxial strain, <i>ϵ</i>, is applied to nanometer-thick GaSe layers via their bending on a mica substrate. The spectral shift Δ<i>E</i> of the room temperature photoluminescence emission with increasing strain has a large associated strain coefficient Δ<i>E</i>/<i>ϵ</i>. This is accompanied by coupled electronic and vibrational states under strain-induced resonant excitation conditions, as probed by Raman spectroscopy.</p>

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Giant elasto-optic response of gallium selenide on flexible mica

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月4日

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  • T. Barker,
  • A. Gray,
  • M. P. Weir,
  • J. S. Sharp,
  • A. Kenton,
  • Z. R. Kudrynskyi,
  • H. Rostami,
  • A. Patané

摘要

Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexible electronics. The Young’s modulus, a measure of how easily a material deforms, plays a critical role in the coupled deformation of a crystal on a flexible substrate, as well as the transfer of strain from the substrate onto the layer. Here, we report on the bending behaviour of gallium selenide (GaSe), a van der Waals semiconductor with a small Young’s modulus and strain-dependent electronic band structure. A controllable, reproducible uniaxial strain, ϵ, is applied to nanometer-thick GaSe layers via their bending on a mica substrate. The spectral shift ΔE of the room temperature photoluminescence emission with increasing strain has a large associated strain coefficient ΔE/ϵ. This is accompanied by coupled electronic and vibrational states under strain-induced resonant excitation conditions, as probed by Raman spectroscopy.