<p>High-entropy alloys (HEAs) exhibit exceptional catalytic performance due to their complex surface structures. However, the vast number of active binding sites in HEAs, as opposed to conventional alloys, presents a significant computational challenge in catalytic applications. To tackle this challenge, robust methods must be developed to efficiently explore the configurational space of HEA catalysts. Here, we introduce a novel approach that combines alchemical perturbation density functional theory (APDFT) with a graph-based correction scheme to explore the binding energy landscape of HEAs. Our results demonstrate that APDFT can accurately predict binding energies for isoelectronic permutations in HEAs at minimal computational cost, significantly accelerating configurational space sampling. However, APDFT errors increase substantially when permutations occur near binding sites. To address this issue, we developed a graph-based Gaussian process regression model to correct discrepancies between APDFT and conventional density functional theory values. Our approach enables the prediction of binding energies for hundreds of thousands of configurations with a mean average error of 30 meV, requiring a handful of ab initio simulations.</p>

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GAPF-DFT: A graph-based alchemical perturbation density functional theory for catalytic high-entropy alloys

  • Mohamed Hendy,
  • Okan K. Orhan,
  • Homin Shin,
  • Ali Malek,
  • Mauricio Ponga

摘要

High-entropy alloys (HEAs) exhibit exceptional catalytic performance due to their complex surface structures. However, the vast number of active binding sites in HEAs, as opposed to conventional alloys, presents a significant computational challenge in catalytic applications. To tackle this challenge, robust methods must be developed to efficiently explore the configurational space of HEA catalysts. Here, we introduce a novel approach that combines alchemical perturbation density functional theory (APDFT) with a graph-based correction scheme to explore the binding energy landscape of HEAs. Our results demonstrate that APDFT can accurately predict binding energies for isoelectronic permutations in HEAs at minimal computational cost, significantly accelerating configurational space sampling. However, APDFT errors increase substantially when permutations occur near binding sites. To address this issue, we developed a graph-based Gaussian process regression model to correct discrepancies between APDFT and conventional density functional theory values. Our approach enables the prediction of binding energies for hundreds of thousands of configurations with a mean average error of 30 meV, requiring a handful of ab initio simulations.