<p>Organic neuromorphic visual sensors promise to overcome the limitations of conventional image sensors, but a trade-off between efficient charge transport and charge trapping has hindered the development of interfaces that combine efficient optical sensing and non-volatile memory. Here we show that an inorganic-organic heterogeneous dielectric (Al₂O₃/PAA), fabricated by low-temperature plasma-enhanced atomic layer deposition and spin-coating, enables flexible thin-film transistors with integrated sensing-memory-processing functions. The devices exhibit an average mobility of 22.65 cm²V⁻¹ s⁻¹, a 30 µs optical response to 450 nm light, charge retention exceeding ten years, write/erase endurance over 10⁴ cycles, an electrical response down to 130 ns, and stable multilevel programming at 10 µs. They emulate synaptic plasticity and achieve recognition accuracies of 99.49% (gesture), 94.78% (digit) and 92.56% (face). When integrated with a convolutional neural network accelerator, the system demonstrates real-time, interference-resistant face detection, highlighting the potential of this dielectric architecture for flexible neuromorphic vision systems.</p>