Scholarlink

<p>Integrated optoelectronic systems strive to combine the logic and memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we develop an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission ( ~ 3.4 μm) in a single device. The device utilizes a floating-gate architecture, in which the semiconductor tellurium serves simultaneously as a charge-storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence, allowing direct optical access to stored states without external modulation. We demonstrate that LuminoMem achieves 4-bit optical storage capacity and enables highly accurate image-recognition neural network simulations, providing a hardware foundation that co-integrates optical emission, memory, and computing capabilities.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月16日

查看全文
  • Delang Liang,
  • Shiyu Wang,
  • Yan Wang,
  • Dong Li,
  • Yuchun Chen,
  • Bin Cheng,
  • Mingyang Qin,
  • Dehong Yang,
  • Jie Sheng,
  • Huawei Liu,
  • Lin Li,
  • Changgan Zeng,
  • Dong Sun,
  • Anlian Pan,
  • Jing Liu

摘要

Integrated optoelectronic systems strive to combine the logic and memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we develop an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission ( ~ 3.4 μm) in a single device. The device utilizes a floating-gate architecture, in which the semiconductor tellurium serves simultaneously as a charge-storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence, allowing direct optical access to stored states without external modulation. We demonstrate that LuminoMem achieves 4-bit optical storage capacity and enables highly accurate image-recognition neural network simulations, providing a hardware foundation that co-integrates optical emission, memory, and computing capabilities.