Scholarlink

<p>Inspired by the brain’s efficient ionic processing, fluidic memristors using ions as charge carriers have emerged as a promising platform for future neuromorphic systems. To better replicate the brain’s dynamic functions, it’s essential to explore additional memristive materials and switching mechanisms. In this work, we present a self-heating-induced blocking memristor (SIBM), in which the memory effect arises from thermally triggered reversible precipitation. When subjected to periodic voltage stimulation, SIBM shows threshold-type unipolar resistive switching and features a clear negative differential resistance (NDR). We demonstrate various neuromorphic functions and experimentally validate a fluidic memristor array capable of repeated memory operations. These results provide insights for the design of next-generation neuromorphic fluidic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Self-heating-induced blocking in nanopores enables neuromorphic ionic computing

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月14日

查看全文
  • Qinyang Fan,
  • Changhui Xu,
  • Wei Liu,
  • Zhenyu Zhang,
  • Yunfei Chen,
  • Jingjie Sha

摘要

Inspired by the brain’s efficient ionic processing, fluidic memristors using ions as charge carriers have emerged as a promising platform for future neuromorphic systems. To better replicate the brain’s dynamic functions, it’s essential to explore additional memristive materials and switching mechanisms. In this work, we present a self-heating-induced blocking memristor (SIBM), in which the memory effect arises from thermally triggered reversible precipitation. When subjected to periodic voltage stimulation, SIBM shows threshold-type unipolar resistive switching and features a clear negative differential resistance (NDR). We demonstrate various neuromorphic functions and experimentally validate a fluidic memristor array capable of repeated memory operations. These results provide insights for the design of next-generation neuromorphic fluidic devices.